Structural, electrical, and optical properties of Ba1-xSmxSnO3 epitaxial thin films on MgO substrates by pulsed laser deposition
Structural, electrical, and optical properties of Ba1-xSmxSnO3 epitaxial thin films on MgO substrates by pulsed laser deposition
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通过脉冲激光沉积在 MgO 基底上制备 Ba1-xSmxSnO3 外延薄膜的结构、电学和光学特性
DOI：
10.1016/j.jallcom.2017.03.116
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发表时间：
2017-06
影响因子：
6.2
通讯作者：
Lei Geng
中科院分区：
文献类型：
--
作者：
Bing Li;Yongxing Zhang;Zhongliang Liu;Lei Geng
Ba1-xSm1-xSnO3(BSSO, x = 0.00, 0.02, 0.04, 0.06, 0.08, 0.10 and 0.15) thin films were epitaxially grown on (001) oriented MgO substrates by pulsed laser deposition (PLD) technique. The structure analysis was performed by x-ray diffraction (XRD), including 2theta-omega (2θ-ω) scans, omega (ω) scans, phi (φ) scans, and reciprocal space mapping (RSM). Hall effect measurement shows that the lowest room temperature resistivity value can reach to 7.842 mΩ cm in the 0.04 Sm-doped thin film, while the carrier mobility (μ) decreases systematically with increasing Sm doping content. Temperature dependent resistivity behavior indicates that the BSSO films exhibit metal-semiconductor transition in the temperature range of 10–300 K with the doping content up to x = 0.08. Optical transmission spectra measurement shows that all the BSSO films exhibit a high transmittance of more than 80% in the visible range. The increasing of optical band gapEgwith the increase of Sm doping content was interpreted by the Burstein-Moss effect and the occurrence of octahedral tilt distorting. Excellent optical and electrical properties mean that the BSSO films have potential applications as transparent and conducting oxide (TCO) material.
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