Preparation of low ferromagnetic resonance linewidth yttrium iron garnet films on silicon substrate
Preparation of low ferromagnetic resonance linewidth yttrium iron garnet films on silicon substrate
复制标题
硅基低铁磁共振线宽钇铁石榴石薄膜的制备
DOI：
10.1016/j.apsusc.2014.04.093
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发表时间：
2014-07
影响因子：
6.7
通讯作者：
M. G. Han
中科院分区：
文献类型：
--
作者：
P. Zheng;J. X. Deng;L. Zheng;M. G. Han
采用脉冲激光沉积法在硅衬底上制备了钇铁石榴石薄膜。采用CeO 2/YSZ（YSZ：Ytria-stabilized ZrO 2）复合缓冲层和多层低温缓冲层（Y3 Al 5 O 12，Y3Al2.5Fe2.5O12，Y3 Fe 5 O 12）（简称CeO 2/YSZ和多层LT缓冲层）实现了低铁磁共振宽度。研究了缓冲层对薄膜微结构、结晶度和低铁磁共振线宽的影响。获得了53 Oe的铁磁共振线宽，这归因于其结晶度好，致密性高，晶粒尺寸均匀。
Yttrium iron garnet films were prepared on silicon substrate by pulsed laser deposition. Compositional buffer layers composed by CeO2/YSZ (YSZ: yttria-stabilized ZrO2) and multi-low temperature buffer layers (Y3Al5O12, Y3Al2.5Fe2.5O12, Y3Fe5O12) (shortened form as CeO2/YSZ and multi-LT buffer layer) were employed to achieve low ferromagnetic resonance width. The effects of buffer layers on the microstructures, crystallinity and low ferromagnetic resonance linewidth of films were studied. A FMR linewidth of 53 Oe were obtained, which was ascribed to its well crystallinity, high dense and uniform grain size.
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影响因子：
3.2
作者：
Q. Guo;M. Nada;Yaliu Ding;Tooru Tanaka;M. Nishio
通讯作者：
Q. Guo;M. Nada;Yaliu Ding;Tooru Tanaka;M. Nishio
影响因子：
4
作者：
Montoncello, F.;Tacchi, S.;Kruglyak, V. V.
通讯作者：
Kruglyak, V. V.
DOI：
10.1109/20.42344
发表时间：
1989-03
期刊：
International Magnetics Conference
影响因子：
--
作者：
J.D. Adas;S. Talisa;P.R. Estage;M. Daniel;J. Kerestes
通讯作者：
J.D. Adas;S. Talisa;P.R. Estage;M. Daniel;J. Kerestes
影响因子：
1.8
作者：
Chun-Hua Chen;A. Saiki;N. Wakiya;K. Shinozaki;N. Mizutani
通讯作者：
Chun-Hua Chen;A. Saiki;N. Wakiya;K. Shinozaki;N. Mizutani
影响因子：
2.7
作者：
C. Tsay;Chuyang Liu;Kuo-Shung Liu;I. Lin;Long-Jang Hu;T. Yeh
通讯作者：
C. Tsay;Chuyang Liu;Kuo-Shung Liu;I. Lin;Long-Jang Hu;T. Yeh