Modulation mechanism of infrared photoreflectance in narrow-gap HgCdTe epilayers: A pump power dependent study
Modulation mechanism of infrared photoreflectance in narrow-gap HgCdTe epilayers: A pump power dependent study
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窄隙 HgCdTe 外延层中红外光反射的调制机制：泵浦功率依赖性研究
DOI：
10.1063/1.3456170
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发表时间：
2010-07
影响因子：
3.2
通讯作者：
Chu, Junhao
中科院分区：
文献类型：
--
作者：
Shao, Jun;Chen, Lu;Zha, F. -X.;Lu, Wei;Lue, Xiang;Guo, Shaoling;He, Li;Chu, Junhao
内建表面电场的调制被公认为块状半导体中光反射（PR）过程的一种机制，尽管泵浦光诱导的过量载流子浓度曾被理论上认为是另一种可能性。在这项工作中，泵浦功率依赖的红外PR测量进行了两个砷掺杂窄隙碲镉汞外延层样品在宽功率范围从约1 mW到高达480 mW。主要光折变特性的积分强度I与泵浦功率P的关系可用I <$Pk来描述，且k对温度和泵浦功率敏感。在11 K或在77和150 K的相当高的泵浦功率下，它取约0.5的值，而在77和150 K的低泵浦功率范围内，它接近1.0。其调制机制是内建表面电场调制和抽运诱导的带边载流子浓度的共同作用。内建表面电场的调制发生时，…
Modulation of built-in surface electric field was well established as a mechanism of photoreflectance (PR) processes in bulklike semiconductors, though pump light induced excess carrier concentration was once suggested theoretically as another possibility. In this work, pump power dependent infrared PR measurements were carried out on two arsenic-doped narrow-gap HgCdTe epilayer samples in a wide power range from about 1 mW to up to 480 mW. The relation between the integral intensity I of main PR features and pump power P can be described with I∝Pk, and the k is sensitive to temperature and pump power. While it takes a value of about 0.5 at 11 K or under considerably high pumping power at 77 and 150 K, it is close to 1.0 in a low pump power range at 77 and 150 K. The modulation mechanism is indicated as a combination of the modulation of built-in surface electric field and the pumping induced excess carrier concentration near the band edge. The modulation of built-in surface electric field takes place whe...
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通过红外光反射光谱研究生长的砷掺杂 HgCdTe 中的杂质水平和带边电子结构
DOI：
10.1103/physrevb.80.155125
发表时间：
2009-10
期刊：
Physical Review B (IF=3.772)
影响因子：
--
作者：
Shaoling Guo;Jianrong Yang;Lu Chen;Yanfeng Wei;Wei Lu;Li He;Xiang Lü;Junhao Chu;Jun Shao
通讯作者：
Jun Shao
影响因子：
4
作者：
J. Shao;F. Yue;Xiang Lu;W. Lu;Wei Huang;Zhifeng Li;Shaoling Guo;J. Chu
通讯作者：
J. Shao;F. Yue;Xiang Lu;W. Lu;Wei Huang;Zhifeng Li;Shaoling Guo;J. Chu
影响因子：
4
作者：
R. Kudrawiec;M. Motyka;J. Misiewicz;M. Hümmer;K. Rößner;T. Lehnhardt;M. Muller;A. Forchel
通讯作者：
R. Kudrawiec;M. Motyka;J. Misiewicz;M. Hümmer;K. Rößner;T. Lehnhardt;M. Muller;A. Forchel
影响因子：
8.6
作者：
R. Nahory;J. L. Shay
通讯作者：
R. Nahory;J. L. Shay
影响因子：
1.6
作者：
A. Giordana;R. Glosser
通讯作者：
A. Giordana;R. Glosser