The ultrasensitive anomalous Hall effect induced by interfacial oxygen atoms redistribution
The ultrasensitive anomalous Hall effect induced by interfacial oxygen atoms redistribution
复制标题
界面氧原子重新分布引起的超灵敏反常霍尔效应
DOI：
10.1063/1.5084318
复制
发表时间：
2019-03
期刊：
影响因子：
--
通讯作者：
G. H. Yu
中科院分区：
文献类型：
--
作者：
W. L. Peng;J. Y. Zhang;L. S. Luo;G. N. Feng;G. H. Yu
利用MgO/CoFeB/X/Ta/MgO(X：Hf或Gd)多层膜中的超灵敏线性反常霍尔效应(AHE)改进了弱磁场的探测。反常霍尔灵敏度(Sv)通过有效的氧迁移辅助界面氧原子的重新分布而被调谐。对于有0.2 nm Hf插入的样品，在沉积状态下的反常霍尔灵敏度(Sv)为16 182 Ω/T，比没有插入的样品(2 470 Ω/T)大560%。然而，插入0.2 nm Gd的样品的Sv仅高达6837 Ω/T，而对于插入0.2 nm Hf的样品，通过进一步的退火热处理，获得了超高的Sv(28 Ω/T)。界面结构结果表明，不同的界面氧原子分布状态导致了不同的线性AHE行为，这可归因于不同的氧迁移过程。金属Hf的强吸氧能力导致了界面氧的双向迁移。然而，在0.2 nm Gd掺杂的样品中，只能观察到界面氧的单向迁移。本研究将为改进基于AHE的弱磁场传感器提供一条有效的途径。利用MgO/CoFeB/X/Ta/MgO(X：Hf或Gd)多层膜中的超灵敏线性反常霍尔效应(AHE)实现了对弱磁场的检测。反常霍尔灵敏度(Sv)通过有效的氧迁移辅助界面氧原子的重新分布而被调谐。对于有0.2 nm Hf插入的样品，在沉积状态下的反常霍尔灵敏度(Sv)为16 182 Ω/T，比没有插入的样品(2 470 Ω/T)大560%。然而，插入0.2 nm Gd的样品的Sv仅高达6837 Ω/T，而对于插入0.2 nm Hf的样品，通过进一步的退火热处理，获得了超高的Sv(28 Ω/T)。界面结构结果表明，不同的界面氧原子分布状态导致了不同的线性AHE行为，这可归因于不同的氧迁移过程。强者..。
Improved weak magnetic field detection has been achieved by the ultrasensitive linear Anomalous Hall effect (AHE) in MgO/CoFeB/X/Ta/MgO (X: Hf or Gd) multilayers. The Anomalous Hall sensitivity (Sv) has been tuned by effective oxygen migration assisted interfacial oxygen atoms redistribution. For the sample with 0.2 nm Hf insertion, the Anomalous Hall sensitivity (Sv) is 16 182 Ω/T at the as-deposited state, 560% larger than that of the sample with no insertion (2470 Ω/T). However, the value of Sv for the sample with 0.2 nm Gd insertion is only up to 6837 Ω/T. An ultrahigh value of Sv (28 282 Ω/T) is obtained for the sample with 0.2 nm Hf insertion by a further annealing process. Interfacial structural results indicate that different linear AHE behavior originate from various interfacial oxygen atoms distribution states, which can be ascribed to different oxygen migration processes. The strong oxygen affinity capability of metallic Hf leads to the bidirectional interfacial oxygen migration. However, only unidirectional interfacial oxygen migration can be observed in the sample with 0.2 nm Gd insertion. This study will provide an effective way to improve the AHE-based sensors for weak magnetic field detection.Improved weak magnetic field detection has been achieved by the ultrasensitive linear Anomalous Hall effect (AHE) in MgO/CoFeB/X/Ta/MgO (X: Hf or Gd) multilayers. The Anomalous Hall sensitivity (Sv) has been tuned by effective oxygen migration assisted interfacial oxygen atoms redistribution. For the sample with 0.2 nm Hf insertion, the Anomalous Hall sensitivity (Sv) is 16 182 Ω/T at the as-deposited state, 560% larger than that of the sample with no insertion (2470 Ω/T). However, the value of Sv for the sample with 0.2 nm Gd insertion is only up to 6837 Ω/T. An ultrahigh value of Sv (28 282 Ω/T) is obtained for the sample with 0.2 nm Hf insertion by a further annealing process. Interfacial structural results indicate that different linear AHE behavior originate from various interfacial oxygen atoms distribution states, which can be ascribed to different oxygen migration processes. The strong o...
登录
查看更多内容
垂直多层界面催化剂引起的可调反常霍尔效应
影响因子：
6.7
作者：
J. Y. Zhang;W. L. Peng;Q. Y. Sun;Y. W. Liu;B. W. Dong;X. Q. Zheng;G. H. Yu;C. Wang;Y. C. Zhao;S. G. Wang
通讯作者：
S. G. Wang
影响因子：
4
作者：
Y. Ishii;H. Yamada;Hiromi Sato;H. Akoh;Y. Ogawa;M. Kawasaki;Y. Tokura
通讯作者：
Y. Ishii;H. Yamada;Hiromi Sato;H. Akoh;Y. Ogawa;M. Kawasaki;Y. Tokura
影响因子：
9.4
作者：
Youxing Yu;Ji Shi;Yoshio Nakamura
通讯作者：
Youxing Yu;Ji Shi;Yoshio Nakamura
影响因子：
3.7
作者：
Canedy, CL;Li, XW;Xiao, G
通讯作者：
Xiao, G
影响因子：
3.7
作者：
M. Stiles;D. R. Penn
通讯作者：
M. Stiles;D. R. Penn