Investigation of the reverse recovery characteristics of vertical bulk GaN-based Schottky rectifiers
Investigation of the reverse recovery characteristics of vertical bulk GaN-based Schottky rectifiers
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垂直体GaN基肖特基整流器反向恢复特性的研究
DOI：
10.1088/1361-6463/aacc3e
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发表时间：
2018-07
期刊：
影响因子：
--
通讯作者：
Xu Ke
中科院分区：
文献类型：
--
作者：
Tian Feifei;Liu Lei;Gu Hong;Wang Jianfeng;Zhang Zhiqiang;Zhou Taofei;Xu Ke
对在独立式 GaN 衬底上制造的垂直体 GaN 基肖特基整流器的反向恢复特性进行了系统研究。对于直径为 1mm、2mm 和 3mm 的肖特基二极管，校正后的反向恢复时间分别约为 13.4 ns、41.0 ns 和 81.2 ns。研究发现，影响体质氮化镓肖特基整流器反向恢复时间的主要因素是 RC 时间常数，它是电路电阻和电容的乘积。除此之外，还测量并分析了体氮化镓肖特基整流器在不同温度下的反向恢复特性。研究发现，体质氮化镓肖特基二极管的反向恢复时间受温度影响较小，因为氮化镓宽带隙半导体的本征激发几乎不受温度影响。
The reverse recovery characteristics of vertical bulk GaN-based Schottky rectifiers, which were fabricated on free-standing GaN substrates, were systematically investigated. The corrected reverse recovery time was obtained to be about 13.4 ns, 41.0 ns and 81.2 ns for 1 mm, 2 mm, and 3 mm diameter Schottky diodes, respectively. The dominant factor that affects the reverse recovery time of a bulk GaN-based Schottky rectifier was found to be the RC time constant, which was the product of the circuit resistance and capacitance. Besides that, the reverse recovery characteristics of the bulk GaN-based Schottky rectifiers at different temperatures were also measured and analyzed. It was found that the reverse recovery time of the bulk GaN-based Schottky diodes was less influenced by temperature, since the intrinsic exitation in the wide bandgap semiconductor of GaN was almost not influenced by temperature.
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