An Investigation on a Crystalline-Silicon Solar Cell with Black Silicon Layer at the Rear.
An Investigation on a Crystalline-Silicon Solar Cell with Black Silicon Layer at the Rear.
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背面黑硅层晶体硅太阳能电池的研究
DOI：
10.1186/s11671-017-2388-y
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发表时间：
2017-12-15
影响因子：
--
通讯作者：
Lu M
中科院分区：
文献类型：
--
作者：
Zhou ZQ;Hu F;Zhou WJ;Chen HY;Ma L;Zhang C;Lu M
为了研制具有亚带隙光伏响应的c-Si(c-Si)太阳电池，研究了背面有黑色Si(b-Si)层的c-Si(c-Si)太阳电池。采用化学腐蚀法制备了单晶硅。C-Si太阳电池的性能远好于类似结构但没有b-Si的c-Si太阳电池，效率相对提高27.7%。这一发现很有趣，因为b-Si具有很大的比表面积，这可能会导致高表面复合和太阳能电池性能退化。C-Si太阳电池的后部形成了梯度带隙，其后部是b-Si层。这种梯度带隙倾向于将自由电子从背面排出，从而降低了b-Si处电子-空穴复合的几率，并提高了c-Si太阳电池的性能。
Crystalline-Si (c-Si) solar cell with black Si (b-Si) layer at the rear was studied in order to develop c-Si solar cell with sub-band gap photovoltaic response. The b-Si was made by chemical etching. The c-Si solar cell with b-Si at the rear was found to perform far better than that of similar structure but with no b-Si at the rear, with the efficiency being increased relatively by 27.7%. This finding was interesting as b-Si had a large specific surface area, which could cause high surface recombination and degradation of solar cell performance. A graded band gap was found to form at the rear of the c-Si solar cell with b-Si layer at the rear. This graded band gap tended to expel free electrons away from the rear, thus reducing the probability of electron-hole recombination at b-Si and improving the performance of c-Si solar cell.
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影响因子：
4
作者：
Hoex, B.;Heil, S. B. S.;Kessels, W. M. M.
通讯作者：
Kessels, W. M. M.
金属纳米粒子在硅中的运动性和诱导各向异性硅蚀刻
影响因子：
19
作者：
Peng, Kuiqing;Lu, Aijiang;Lee, Shuit-Tong
通讯作者：
Lee, Shuit-Tong
影响因子：
6.7
作者：
Lv, Hongjie;Shen, Honglie;Yuan, Jiren
通讯作者：
Yuan, Jiren
影响因子：
4
作者：
Wu, C;Crouch, CH;Karger, A
通讯作者：
Karger, A
影响因子：
3.2
作者：
SASSI, G
通讯作者：
SASSI, G