Defect and strain engineering of monolayer WSe(2) enables site-controlled single-photon emission up to 150 K.
Defect and strain engineering of monolayer WSe(2) enables site-controlled single-photon emission up to 150 K.
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DOI：
10.1038/s41467-021-23709-5
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发表时间：
2021-06-11
影响因子：
16.6
通讯作者：
Moody G
中科院分区：
文献类型：
--
作者：
Parto K;Azzam SI;Banerjee K;Moody G
近年来，原子薄货车德瓦尔斯材料中的量子点状单光子发射器已成为未来片上可扩展量子光源的有前途的平台，具有优于现有技术的独特优势，特别是针对特定地点的工程潜力。然而，这些源的功能所需的低温一直是其全部潜力的抑制剂。在2D材料中创建发射器的现有方法在延长工作温度同时保持发射器的制造产率和纯度方面面临根本挑战。在这项工作中，我们展示了一种方法，通过纳米级应力源和缺陷工程，通过电子束照射，利用独立和同步应变工程，以高产率在原子级薄WSe 2中创建站点控制的单光子发射器。许多发射体具有双激子级联发射，单光子纯度超过95%，工作温度高达150 K。这种方法，再加上可能的等离子体或光学微腔集成，进一步实现可扩展的，室温，和高质量的2D单光子和纠缠光子源。二维半导体中的量子缺陷是有前途的量子光源，但所需的低温限制了它们的适用性。在这里，作者报告了一种在单层WSe 2中创建单光子发射器的方法，该方法在高达150 K的温度下工作，而无需等离子体或光学腔。
In recent years, quantum-dot-like single-photon emitters in atomically thin van der Waals materials have become a promising platform for future on-chip scalable quantum light sources with unique advantages over existing technologies, notably the potential for site-specific engineering. However, the required cryogenic temperatures for the functionality of these sources has been an inhibitor of their full potential. Existing methods to create emitters in 2D materials face fundamental challenges in extending the working temperature while maintaining the emitter’s fabrication yield and purity. In this work, we demonstrate a method of creating site-controlled single-photon emitters in atomically thin WSe2 with high yield utilizing independent and simultaneous strain engineering via nanoscale stressors and defect engineering via electron-beam irradiation. Many of the emitters exhibit biexciton cascaded emission, single-photon purities above 95%, and working temperatures up to 150 K. This methodology, coupled with possible plasmonic or optical micro-cavity integration, furthers the realization of scalable, room-temperature, and high-quality 2D single- and entangled-photon sources. Quantum defects in 2D semiconductors are promising quantum light sources, but the required cryogenic temperatures limit their applicability. Here, the authors report a method to create single-photon emitters in monolayer WSe2 operating at temperatures up to 150 K without plasmonic or optical cavities.
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