Thermally evaporated SnS:Cu thin films for solar cells
Thermally evaporated SnS:Cu thin films for solar cells
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用于太阳能电池的热蒸发 SnS:Cu 薄膜
DOI：
10.1109/nems.2011.6017496
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发表时间：
2011-09
期刊：
影响因子：
--
通讯作者：
Cheng, Shuying
中科院分区：
文献类型：
--
作者：
Zhang, Shuai;Cheng, Shuying
采用热蒸发技术在玻璃衬底上制备了厚度约为300 nm的掺铜SnS薄膜。通过控制铜的蒸发时间来大致改变SnS薄膜中的铜掺杂浓度(从5.7个原子%到23个原子%)，得到了不同的掺铜SnS薄膜。然后在温度2 5 0°C、压力5.0×10−3Pa下进行90min的热处理。用X射线衍射仪、UV/Vis/NIR光谱仪和霍尔效应测试系统对薄膜的结构、光学和电学性能进行了表征。所有的薄膜都是具有正交结构的多晶SnS，薄膜中的微晶都是沿(111)方向唯一取向的。随着掺铜浓度的增加，SnS：Cu薄膜的直接带隙Eg开始减小，在15个原子%时达到最小值1.38 eV，然后增大。薄膜的载流子浓度急剧增加，而薄膜的电阻率直线下降。所有薄膜都具有p型导电性。在优化的工艺条件下，可以制备出适用于薄膜太阳电池吸波材料的SnS：Cu薄膜。
Cu-doped SnS films with a thickness of about 300 nm have been grown on glass substrates by thermal evaporation technique. Different Cu-doped SnS films were obtained by controlling the Cu evaporation time to roughly alter Cu-doping concentration in SnS films (from 5.7 atom% to 23 atom% ). Then they were annealed at a temperature of 250 °C and a pressure of 5.0×10−3 Pa for 90 min. The structural, optical and electrical properties of the films were characterized with X-ray diffraction, UV/VIS/NIR Spectrometer and Hall Effect Measurement System. All the films are polycrystalline SnS with orthorhombic structure, and the crystallites in the films are all exclusively oriented along the (111) direction. With the increase of Cu-doping concentration, the evaluated direct band gap Eg of the SnS:Cu films initially decreases, reaches a minimum value of 1.38 eV with 15 atom% Cu and then increases thereafter. The carrier concentration of the films increases sharply, while the resistivity of the films decreases straightly. All the films are of p-type conductivity. Using the optimized conditions it is possible to prepare SnS:Cu thin films suitable for absorbers of thin film solar cells.
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