Optimal Design of Large Signal Performance of AlN/GaN Hetero-Structural IMPATT and MITATT Diodes
Optimal Design of Large Signal Performance of AlN/GaN Hetero-Structural IMPATT and MITATT Diodes
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AlN/GaN异质结构IMPATT和MITATT二极管大信号性能优化设计
DOI：
10.4028/www.scientific.net/msf.1014.157
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发表时间：
2020-11
期刊：
影响因子：
--
通讯作者：
Yi Wan
中科院分区：
文献类型：
--
作者：
Ping Wu;Wensheng Wei;Junding Zheng;Weibo Yang;Chang Li;Mingchang He;Yi Wan
Hetero-structure of AlxGa1-xN/GaN exhibits important applications in high frequency and large power devices. In this paper, AlN/GaN is adopted to optimal design the large power impact avalanche transit time (IMPATT) and mixed tunneling avalanche transit time (MITATT) diodes operating at the atmospheric low loss window frequency of 0.85 THz. The static state and large signal characteristics of the devices are numerically simulated. The values of peak electric field strength, break-down voltage, avalanche voltage, the maximum generation rates of avalanche and tunneling, admittance-frequency relation, output power, conversion efficiency, quality factor of the proposed hetero-structural IMPATT and MITATT diodes are calculated, respectively. Via comparing the obtained results of (n)AlN/(p)GaN and (n)GaN/(p)AlN IMPATT diodes to those of the MITATT counterparts, there exists little performance difference between IMPATT and MITATT devices while implies significant difference between the (n)AlN/(p)GaN and (n)GaN/(p)AlN diodes.
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