Anisotropic electrical transport of flexible tungsten carbide nanostructures: towards nanoscale interconnects and electron emitters
Anisotropic electrical transport of flexible tungsten carbide nanostructures: towards nanoscale interconnects and electron emitters
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柔性碳化钨纳米结构的各向异性电传输：面向纳米级互连和电子发射器
DOI：
10.1088/1361-6528/aa87c3
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发表时间：
2017-10
期刊：
影响因子：
3.5
通讯作者：
Wang Chengxin
中科院分区：
文献类型：
--
作者：
Sun Bo;Sun Yong;Wang Chengxin
由于六方碳化钨（WC）晶格中金属键和离子键的共存，在基面和沿着c轴方向上发现了不同的电子行为，这可能会产生有趣的各向异性力学和电学性能。为了证明这一点，低维纳米结构，如纳米线和纳米片是适合的调查，因为它们通常生长在具有特殊取向的单晶。本文报道了[0001]生长WC纳米线和基底面扩展纳米片的各向异性电导率的实验研究，其电导率分别为7.86 × 103 Ω-1 · m-1和7.68 × 104 Ω-1 · m-1。这符合这样的事实，即高度本地化的W d状态沿c方向沿着排列，而在W平面中几乎没有平面内定向键合。利用先进的微操作技术，纳米线的电导率被测试为近似恒定，即使在相当大的弯曲状态下。此外，基于大面积发射和单纳米线（纳米片）发射，对WC的场致电子发射进行了评价。单根纳米线表现出稳定的电子发射性能，在熔融前可以输出大于3 μ A的发射电流。这些结果提供了有用的参考，以评估低维碳化钨纳米结构作为电子材料在柔性器件，如纳米级互连和电子发射器。
Due to the coexistence of metal- and ionic-bonds in a hexagonal tungsten carbide (WC) lattice, disparate electron behaviors were found in the basal plane and along the c-axial direction, which may create an interesting anisotropic mechanical and electrical performance. To demonstrate this, low-dimensional nanostructures such as nanowires and nanosheets are suitable for investigation because they usually grow in single crystals with special orientations. Herein, we report the experimental research regarding the anisotropic conductivity of [0001] grown WC nanowires and basal plane-expanded nanosheets, which resulted in a conductivity of 7.86 × 103 Ω–1 · m–1 and 7.68 × 104 Ω–1 · m–1 respectively. This conforms to the fact that the highly localized W d state aligns along the c direction, while there is little intraplanar directional bonding in the W planes. With advanced micro-manipulation technology, the conductivity of a nanowire was tested to be approximately constant, even under a considerable bending state. Moreover, the field electron emission of WC was evaluated based on large area emission and single nanowire (nanosheet) emission. A single nanowire exhibits a stable electron emission performance, which can output emission currents >3 uA before fusing. These results provide useful references to assess low-dimensional WC nanostructures as electronic materials in flexible devices, such as nanoscale interconnects and electron emitters.
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影响因子：
41.2
作者：
Wu, B;Heidelberg, A;Boland, JJ
通讯作者：
Boland, JJ
影响因子：
4
作者：
Yun‐Hi Lee;C. Choi;Y. Jang;E. Kim;B. Ju;N. Min;J. Ahn
通讯作者：
Yun‐Hi Lee;C. Choi;Y. Jang;E. Kim;B. Ju;N. Min;J. Ahn
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作者：
Gheorghe Stan;S. Krylyuk;Albert V. Davydov;Igor Levin;Robert F. Cook
通讯作者：
Gheorghe Stan;S. Krylyuk;Albert V. Davydov;Igor Levin;Robert F. Cook
影响因子：
29.4
作者：
Han, Xiaodong;Zheng, Kun;Wang, Zhong Lin
通讯作者：
Wang, Zhong Lin
影响因子：
29.4
作者：
Han Zhang;Jie Tang;Qi Zhang;Gongpu Zhao;Guang Yang;Jian Zhang;O. Zhou;L. Qin
通讯作者：
Han Zhang;Jie Tang;Qi Zhang;Gongpu Zhao;Guang Yang;Jian Zhang;O. Zhou;L. Qin