An alternative GaSb substrate allowing close-spaced sublimation of Cd0.9Zn0.1Te epitaxial thick film for radiation detectors
An alternative GaSb substrate allowing close-spaced sublimation of Cd0.9Zn0.1Te epitaxial thick film for radiation detectors
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一种替代的 GaSb 衬底，允许辐射探测器的 Cd0.9Zn0.1Te 外延厚膜近距离升华
DOI：
10.1016/j.mssp.2022.106688
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发表时间：
2022
影响因子：
4.1
通讯作者：
Wanqi Jie
中科院分区：
文献类型：
--
作者：
Yang Li;Kun Cao;Gangqiang Zha;Xinlei Zhang;Xin Wan;Dou Zhao;Yajie Liu;Wanqi Jie
摘要Cd 0.9 Zn 0.1 Te用于高性能室温核辐射探测器已有几十年的历史。然而，寻找更有效的高质量晶体生长方法仍然是一个有吸引力的研究课题。本研究证明了采用近距离升华法在GaSb（001）衬底上成功生长出高质量的Cd 0.9 Zn 0.1 Te外延厚膜，其中GaSb与Cd 0.9 Zn 0.1 Te之间的晶格失配为−5.7%，远小于GaAs与Cd 0.9 Zn 0.1 Te之间的晶格失配（−13.9%）。CdZnTe/GaSb异质结的界面错配位错明显小于CdZnTe/GaAs的界面错配位错，这是透射电镜高角环形暗场图像所证实的。与Au/CdZnTe/GaAs相比，Au/CdZnTe/GaSb双晶x射线摆动曲线的FWHM和漏电流更低，电阻率和（μ τ） e更高。利用生长的CdZnTe/GaSb厚膜制备的探测器在241 Am@ 59.54 KeV γ射线能谱下具有17%的能量分辨率，表明GaSb作为探测器级CdZnTe薄膜生长的合适衬底具有潜在的应用前景。
Abstract Cd 0.9 Zn 0.1 Te have been used for the high-performance room-temperature nuclear radiation detectors for decades. However, searching for more efficient growth methods of high-quality crystals is still an attractive research topic. This study proved the successful growth of high quality Cd 0.9 Zn 0.1 Te epitaxial thick films on GaSb (001) substrates using close-spaced sublimation method, where the lattice mismatch between GaSb and Cd 0.9 Zn 0.1 Te was− 5.7%, much smaller than that between GaAs and Cd 0.9 Zn 0.1 Te (− 13.9%). The interfacial mismatch dislocations on CdZnTe/GaSb heterojunctions were found to be much less than those of CdZnTe/GaAs, as confirmed by cross-sectional selected area electron diffraction patterns and high angle annular dark field images of transmission electron microscopy. Compared to Au/CdZnTe/GaAs, the FWHM of double crystal X-ray rocking curve and leakage current of Au/CdZnTe/GaSb detector were lower, and the resistivity and (μ τ) e were higher. The detector made from the as-grown CdZnTe/GaSb thick film was demonstrated to possess the energy resolution of 17% for 241 Am@ 59.54 KeV γ ray energy spectrum, indicated the potential application of GaSb as a suitable substrate for detector-grade CdZnTe film growth.
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影响因子：
1.8
作者：
S. Tobenas;E. M. Larramendi;E. Purón;O. Melo;F. Cruz-Gandarilla;M. Hesiquio-Garduño;M. Tamura
通讯作者：
S. Tobenas;E. M. Larramendi;E. Purón;O. Melo;F. Cruz-Gandarilla;M. Hesiquio-Garduño;M. Tamura
影响因子：
3.1
作者：
Junning Gao;W. Jie;Yanyan Yuan;Tao Wang;Yong Xie;Ya-bao Wang;Yuhong Huang;Junli Tong;Hui Yu-Hui-Y
通讯作者：
Junning Gao;W. Jie;Yanyan Yuan;Tao Wang;Yong Xie;Ya-bao Wang;Yuhong Huang;Junli Tong;Hui Yu-Hui-Y
影响因子：
3.9
作者：
F. Nicoll
通讯作者：
F. Nicoll
DOI：
10.1016/j.nima.2004.05.071
发表时间：
2004-09-21
影响因子：
1.4
作者：
Owens, A;Peacock, A
通讯作者：
Peacock, A
DOI：
10.1016/j.nima.2006.01.110
发表时间：
2006-07
影响因子：
1.4
作者：
P. Sellin
通讯作者：
P. Sellin