Effect of nanoscale surface topography on low temperature direct wafer bonding process with UV activation
Effect of nanoscale surface topography on low temperature direct wafer bonding process with UV activation
复制标题
纳米级表面形貌对紫外激活低温直接晶圆键合工艺的影响
DOI：
10.1016/j.sna.2009.01.023
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发表时间：
2009-04
影响因子：
4.6
通讯作者：
Tang, Zirong
中科院分区：
文献类型：
--
作者：
Shi, Tielin;Liao, Guanglan;Liu, Shiyuan;Peng, Ping;Nie, Lei;Tang, Zirong
低温直接键合技术在微机电系统（MEMS）、传感器以及绝缘体上硅（SOI）材料等领域具有广阔的应用前景。键合质量与晶片弯曲度、表面粘附能和纳米级表面形貌密切相关。有效的表面活化和纳米级表面形貌评估是键合工艺的关键。针对紫外光激活的低温硅片直接键合工艺，通过控制紫外光辐照时间，对辐照前后硅片表面纳米级形貌进行了改性和表征。利用原子力显微镜（AFM）测量的纳米级表面形貌数据，通过承载比和均方根（RMS）两种方法进行评价，并将评价结果与键合强度进行关联，以了解键合过程。结果表明，通过控制紫外光照射时间，承载比方法更适合表征表面粗糙度和优化键合工艺。该方法也适用于各种各样的低温晶片键合工艺，其中表面粗糙度被修改。
Low temperature direct wafer bonding is a promising technology for microelectromechanical systems (MEMS), sensors as well as silicon-on-insulator (SOI) materials. The bond quality is closely related to the wafer-bow, surface adhere energy and nanoscale surface topography. Effective surface activation and nanoscale surface topography evaluation is critical for the bonding process. For the low temperature silicon wafer direct bonding process with ultra violet (UV) light activation, surface nanoscale topography is modified and characterized before and after UV irradiation by the control of irradiation duration. The measured data of nanoscale topography by atomic force microscope (AFM) is evaluated by both bearing ratio and root-mean-square (RMS) approaches, from which the results are then correlated with the bond strength to understand the bonding process. It is shown that the bear ratio approach is more suitable for characterizing the surface roughness and optimizing the bonding process through the control of UV irradiation duration. The approach is also applicable to a wide variety of low temperature wafer bonding process where surface roughness is modified.
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影响因子：
4.6
作者：
Goustouridis, D;Minoglou, K;Tsoukalas, D
通讯作者：
Tsoukalas, D
影响因子：
3.9
作者：
K. Ljungberg;U. Jansson;S. Bengtsson;A. Söderbärg
通讯作者：
K. Ljungberg;U. Jansson;S. Bengtsson;A. Söderbärg
影响因子：
2.7
作者：
K. Turner;S. Spearing;W. Baylies;M. Robinson;R. Smythe
通讯作者：
K. Turner;S. Spearing;W. Baylies;M. Robinson;R. Smythe
影响因子：
6.7
作者：
J. Arokiaraj;T. Soga;T. Jimbo;M. Umeno
通讯作者：
J. Arokiaraj;T. Soga;T. Jimbo;M. Umeno
影响因子：
4.6
作者：
H. Nakanishi;T. Nishimoto;R. Nakamura;A. Yotsumoto;T. Yoshida;S. Shoji
通讯作者：
H. Nakanishi;T. Nishimoto;R. Nakamura;A. Yotsumoto;T. Yoshida;S. Shoji