Tunable nanostructured distributed Bragg reflectors for III-nitride optoelectronic applications.
Tunable nanostructured distributed Bragg reflectors for III-nitride optoelectronic applications.
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高反射和导电的分布式布拉格反射器（DBR）是高性能III族氮化物光电器件（例如垂直腔表面发射激光器（VCSEL））的关键，但它们仍然缺乏晶格匹配的导电DBR和不可控的工艺。在这项工作中，使用转移矩阵方法（TMM）在不同电解质中使用电化学蚀刻（EC），通过实验和模拟制造和优化纳米结构GaN基DBR，以获得均匀的晶圆级、高反射性和导电性的反射器，用于GaN基光电子学的应用。结果表明，通过EC可以在中性硝酸钠中实现具有高反射率（> 93％）和宽阻带（~80 nm）的纳米结构GaN基DBR，并且可以通过调整纳米结构GaN DBR层的厚度来设计具有全可见光谱范围的纳米结构GaN DBR。通过采用所制造的纳米结构 GaN 基 DBR，GaN 基 micro-LED 的光致发光 (PL) 和出光功率分别提高了 6 倍和 150%，而电性能没有下降，这有助于 DBR 层产生强烈的光散射。我们相信这项工作将为获得高性能GaN基光电器件铺平道路，并指导其在柔性器件和生物医学传感器领域的应用。高反射和导电的分布式布拉格反射器是高性能III族氮化物光电器件（例如垂直腔表面发射激光器）的关键，但它们仍然缺乏晶格匹配的导电DBR和不可控的工艺。
Highly reflective and conductive distributed Bragg reflectors (DBRs) are the key for high-performance III-nitride optoelectronic devices, such as vertical cavity surface emitting lasers (VCSELs), but they still suffer from lack of lattice-matched conductive DBR and uncontrollable processes. In this work, nanostructured GaN-based DBRs were fabricated and optimized both experimentally and simulatively using electrochemical etching (EC) in different electrolytes using the transfer-matrix method (TMM) to obtain uniform wafer scale, highly reflective and conductive reflectors for the application of GaN-based optoelectronics. The results revealed that a nanostructured GaN-based DBR with high reflectivity (>93%) and broad stopband (∼80 nm) could be achieved in neutral sodium nitrate by EC, and the nanostructured GaN DBR with a full visible spectrum range could be designed by tuning the thickness of the nanostructured GaN DBR layers. The photoluminescence (PL) and light-out power enhancements of the GaN-based micro-LED by incorporating the fabricated nanostructured GaN-based DBR were 6 times and 150% without the degradation of electrical performance, respectively, which contributed to strong light scattering from the DBR layers. We believe that this work will pave a way to obtain high-performance GaN-based optoelectronic devices and guide the applications in the field of flexible devices and biomedical sensors. Highly reflective and conductive distributed Bragg reflectors are key for high-performance III-nitride optoelectronic devices, such as vertical cavity surface emitting lasers, but they still suffer from lack of lattice-matched conductive DBR and uncontrollable processes.
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