Precise temperature mapping of GaN-based LEDs by quantitative infrared micro-thermography.
Precise temperature mapping of GaN-based LEDs by quantitative infrared micro-thermography.
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DOI：
10.3390/s120404648
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发表时间：
2012
期刊：
影响因子：
--
通讯作者：
Kim GH
中科院分区：
文献类型：
--
作者：
Chang KS;Yang SC;Kim JY;Kook MH;Ryu SY;Choi HY;Kim GH
报道了一种通过定量红外显微热成像技术精确测量 GaN 基发光二极管 (LED) 温度分布的方法。为了减少校准误差，校准和热成像采用相同的测量条件；校准是在虚拟蓝宝石晶圆上的高辐射黑色区域进行的，该虚拟蓝宝石晶圆装载在热电冷却器底座上的 LED 晶圆附近。我们使用虚拟晶圆上黑色涂漆区域和无偏 LED 晶圆在两种不同温度下的红外热辐射图像来确定降低温度测量精度的因素，即仪器的不均匀响应、叠加的偏移辐射、反射辐射和 LED 表面的发射率图。通过测量偏置 LED 的红外热辐射图像来校正这些因素，我们确定了精确的绝对温度图像。因此，我们可以观察局部自热产生的位置以及它在 LED 发光区域上的分布情况。实验结果表明，由于电流拥挤效应，在高注入水平下，LED 表面的 p 接触边缘附近会出现高度局部自热和显着的温度梯度，这对 LED 性能和可靠性不利。
A method of measuring the precise temperature distribution of GaN-based light-emitting diodes (LEDs) by quantitative infrared micro-thermography is reported. To reduce the calibration error, the same measuring conditions were used for both calibration and thermal imaging; calibration was conducted on a highly emissive black-painted area on a dummy sapphire wafer loaded near the LED wafer on a thermoelectric cooler mount. We used infrared thermal radiation images of the black-painted area on the dummy wafer and an unbiased LED wafer at two different temperatures to determine the factors that degrade the accuracy of temperature measurement, i.e., the non-uniform response of the instrument, superimposed offset radiation, reflected radiation, and emissivity map of the LED surface. By correcting these factors from the measured infrared thermal radiation images of biased LEDs, we determined a precise absolute temperature image. Consequently, we could observe from where the local self-heat emerges and how it distributes on the emitting area of the LEDs. The experimental results demonstrated that highly localized self-heating and a remarkable temperature gradient, which are detrimental to LED performance and reliability, arise near the p-contact edge of the LED surface at high injection levels owing to the current crowding effect.
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DOI：
10.3390/s90705068
发表时间：
2009
期刊：
Sensors (Basel, Switzerland)
影响因子：
--
作者：
Lee CY;Su A;Liu YC;Fan WY;Hsieh WJ
通讯作者：
Hsieh WJ
影响因子：
--
作者：
Krames, Michael R.;Shchekin, Oleg B.;Craford, M. George
通讯作者：
Craford, M. George
影响因子：
38.3
作者：
Freitag, Marcus;Chiu, Hsin-Ying;Avouris, Phaedon
通讯作者：
Avouris, Phaedon
影响因子：
1.6
作者：
Furstenberg, Robert;Kendziora, C. A.;McGill, R. Andrew
通讯作者：
McGill, R. Andrew
影响因子：
4
作者：
Ippolito, SB;Thorne, SA;Leblebici, Y
通讯作者：
Leblebici, Y