Low-voltage programmable/erasable high performance flexible organic transistor nonvolatile memory based on a tetratetracontane passivated ferroelectric terpolymer
Low-voltage programmable/erasable high performance flexible organic transistor nonvolatile memory based on a tetratetracontane passivated ferroelectric terpolymer
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基于四十四烷钝化铁电三元聚合物的低压可编程/可擦除高性能柔性有机晶体管非易失性存储器
DOI：
10.1016/j.orgel.2018.10.016
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发表时间：
2019
影响因子：
3.2
通讯作者：
Wei Wang
中科院分区：
文献类型：
--
作者：
Meili Xu;Shuxu Guo;Ting Xu;Wenfa Xie;Wei Wang
未来的柔性电子系统需要结合低功耗和机械可弯曲性的存储器件。然而，高的编程/擦除（P/E）电压，这是普遍需要切换存储状态在以前报道的铁电有机场效应晶体管（Fe-OFET）的非易失性存储器（NVM），严重阻碍了它们的实际应用。在这项工作中，我们开发了一种新的路线，以实现低电压可编程/可擦除柔性Fe-OFET NVM。铁电聚合物聚（偏二氟乙烯-三氟乙烯-氯三氟乙烯）[P（VDF-TrFE-CTFE）]，而不是传统的铁电共聚物聚（偏二氟乙烯-三氟乙烯）[P（VDF-TrFE）]，被用作栅极电介质。P（VDF-TrFE-CTFE）的低矫顽场是对Fe-OFET NVM中的低电压操作的主要贡献，即使具有相对厚的铁电栅极电介质层。通过在P（VDF-TrFE-CTFE）薄膜表面沉积一层长链烷烃分子作为钝化层，获得了半导体并五苯的逐层生长模式，从而获得了大晶粒和良好的沟道/介质界面形貌。因此，Fe-OFET NVM的迁移率大大提高。结果，实现了高性能柔性Fe-OFET NVM，其具有±15 V的低P/E电压、高达0.5 cm 2 V-1 s-1的高迁移率、超过1000次循环的可靠P/E耐久性、超过6000 s的稳定数据存储保持能力，和优异的机械弯曲耐久性，在2000次重复拉伸弯曲循环后，4.0毫米。
Future flexible electronic systems require memory devices combining low power consumption and mechanical bendability. However, high programming/erasing (P/E) voltages, which are universally required to switch the storage states in previously reported ferroelectric organic field-effect transistor (Fe-OFET) nonvolatile memories (NVMs), severely prevent their practical applications. In this work, we develop a novel route to achieve a low-voltage programmable/erasable flexible Fe-OFET NVM. Ferroelectric terpolymer poly(vinylidene-fluoride-trifluoroethylene-chlorotrifluoroethylene) [P(VDF-TrFE-CTFE)], rather than the conventional ferroelectric copolymer poly(vinylidene-fluoride-trifluoroethylene) [P(VDF-TrFE)], is used as the gate dielectric. The low coercive field of P(VDF-TrFE-CTFE) is the main contribution to the low-voltage operation in the Fe-OFET NVM, even with a relative thick ferroelectric gate dielectric layer. By depositing a long-chain alkane molecule Tetratetracontane (TTC) as the passivation layer on the surface of P(VDF-TrFE-CTFE) film, the layer-by-layer growth mode of semiconductor pentacene is obtained, which results in a large crystalline grain and good interface morphology at the channel/dielectric. Therefore, the mobility of Fe-OFET NVMs is greatly improved. As a result, a high performance flexible Fe-OFET NVM is achieved, with a low P/E voltage of ±15 V, high mobility up to 0.5 cm2V−1s−1, reliable P/E endurance property over 1000 cycles, stable data storage retention capability over 6000 s, and excellent mechanical bending durability without visible degradation after 2000 repetitive tensile bending cycles at a small curvature radius of 4.0 mm.
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影响因子：
3.2
作者：
F. Xia;B. Razavi;Haisheng Xu;Z.Y. Cheng;Qiming Zhang
通讯作者：
F. Xia;B. Razavi;Haisheng Xu;Z.Y. Cheng;Qiming Zhang
影响因子：
41.2
作者：
Asadi, Kamal;De Leeuw, Dago M.;Blom, Paul W. M.
通讯作者：
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影响因子：
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通讯作者：
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影响因子：
3.2
作者：
Pramod Kumar;Akanksha Sharma;Sarita Yadav;Subhasis Ghosh
通讯作者：
Pramod Kumar;Akanksha Sharma;Sarita Yadav;Subhasis Ghosh
影响因子：
1.4
作者：
Jung, Soon-Won;Koo, Jae Bon;Koo, Kyung-Wan
通讯作者：
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