Friction and shear strength at the nanowire-substrate interfaces.

Friction and shear strength at the nanowire-substrate interfaces.
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DOI:
10.1007/s11671-009-9478-4
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发表时间:
2009-11-28
影响因子:
--
通讯作者:
Wang, Zhong Lin
Wang, Zhong Lin
中科院分区:
材料科学3区
文献类型:
--
作者:
Zhu, Yong;Qin, Qingquan;Gu, Yi;Wang, Zhong Lin

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纳米线-衬底界面的摩擦和剪切强度对纳米器件的电/机械性能和寿命有重要影响。然而,由于涉及的实验挑战,关于这一主题的报道很少,更具体地说,还没有报道调查单个NW针尖与衬底接触的结构。本文利用一种新的实验方法,首次报道了NW针尖与衬底之间的摩擦测量。测量是基于扫描电子显微镜内的NW原位屈曲。银纳米管与金衬底之间的摩擦系数为0.09~0.12,氧化锌纳米管与金衬底之间的摩擦系数为0.10~0.15。NW与基材之间的粘结改变了真实接触面积,从而影响了界面剪切强度。连续介质力学计算表明,银纳米管与金衬底的界面剪切强度为134~139 Mpa,而氧化锌纳米管与金衬底的界面剪切强度为78.9~95.3 Mpa。该方法也可应用于其他NW-基片系统的摩擦参数测量。我们对界面摩擦和剪切强度的研究结果可能对用于纳米力学表征的原子力显微镜三点弯曲测试有一定的指导意义。
The friction and shear strength of nanowire (NW)–substrate interfaces critically influences the electrical/mechanical performance and life time of NW-based nanodevices. Yet, very few reports on this subject are available in the literature because of the experimental challenges involved and, more specifically no studies have been reported to investigate the configuration of individual NW tip in contact with a substrate. In this letter, using a new experimental method, we report the friction measurement between a NW tip and a substrate for the first time. The measurement was based on NW buckling in situ inside a scanning electron microscope. The coefficients of friction between silver NW and gold substrate and between ZnO NW and gold substrate were found to be 0.09–0.12 and 0.10–0.15, respectively. The adhesion between a NW and the substrate modified the true contact area, which affected the interfacial shear strength. Continuum mechanics calculation found that interfacial shear strengths between silver NW and gold substrate and between ZnO NW and gold substrate were 134–139 MPa and 78.9–95.3 MPa, respectively. This method can be applied to measure friction parameters of other NW–substrate systems. Our results on interfacial friction and shear strength could have implication on the AFM three-point bending tests used for nanomechanical characterisation.
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