Dissolution-precipitation growth of uniform and clean two dimensional transition metal dichalcogenides.
Dissolution-precipitation growth of uniform and clean two dimensional transition metal dichalcogenides.
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DOI：
10.1093/nsr/nwaa115
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发表时间：
2021-03
影响因子：
20.6
通讯作者：
Cheng HM
中科院分区：
文献类型：
--
作者：
Cai Z;Lai Y;Zhao S;Zhang R;Tan J;Feng S;Zou J;Tang L;Lin J;Liu B;Cheng HM
二维过渡金属二硫族化合物（TMDCs）引起了人们的广泛关注，并在许多方面显示出广阔的应用前景。然而，由于在当前的化学气相沉积生长过程中难以控制向反应提供反应物的方式，因此获得具有清洁表面的均匀TMDCs是具有挑战性的。在这里，我们报告了一种称为“溶解-沉淀”（DP）生长的新方法，其中金属源被密封在玻璃衬底内以控制它们对反应的进料。值得注意的是，金属源在玻璃内部扩散到玻璃表面提供了均匀的金属源，并将TMDC生长限制在仅表面反应，同时消除了不必要的气相反应。这一特性产生了高度均匀的单层TMDCs，在厘米级衬底上具有干净的表面。该方法适用于多种TMDCs及其合金的DP生长，为通过对金属源的精细控制来控制清洁TMDCs的生长提供了坚实的基础。采用精确控制金属源，将材料生长限制在表面反应的通用溶解-沉淀生长方法，获得了具有良好质量和超净表面的二维材料。
Two dimensional transition metal dichalcogenides (TMDCs) have attracted much interest and shown promise in many applications. However, it is challenging to obtain uniform TMDCs with clean surfaces, because of the difficulties in controlling the way the reactants are supplied to the reaction in the current chemical vapor deposition growth process. Here, we report a new growth approach called ‘dissolution-precipitation’ (DP) growth, where the metal sources are sealed inside glass substrates to control their feeding to the reaction. Noteworthy, the diffusion of metal source inside glass to its surface provides a uniform metal source on the glass surface, and restricts the TMDC growth to only a surface reaction while eliminating unwanted gas-phase reaction. This feature gives rise to highly uniform monolayer TMDCs with a clean surface on centimeter-scale substrates. The DP growth works well for a large variety of TMDCs and their alloys, providing a solid foundation for the controlled growth of clean TMDCs by the fine control of the metal source. 2D materials with good quality and ultraclean surface were obtained by a universal dissolution-precipitation growth method that precisely controls the metal source and restricts the growth of materials to surface reaction.
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