Effects of sulfurization temperature on the structural and optical properties of Cu2CdSnS4 thin films prepared by direct liquid method
Effects of sulfurization temperature on the structural and optical properties of Cu2CdSnS4 thin films prepared by direct liquid method
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硫化温度对直接液相法制备Cu2CdSnS4薄膜结构和光学性能的影响
DOI：
10.1016/j.matlet.2017.02.002
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发表时间：
2017-04
影响因子：
3
通讯作者：
Chu Junhao
中科院分区：
文献类型：
--
作者：
Zhang Qiao;Deng Hongmei;Chen Leilei;Tao Jiahua;Yu Jiejin;Yang Pingxiong;Chu Junhao
Cu2CdSnS4(CCTS)是一种很有前途的薄膜太阳能电池吸波材料，采用直接液体镀膜法在玻璃衬底上沉积。系统地研究了硫化温度对CCTS的组成、形貌、结构和光学性能的影响。X射线衍射和拉曼光谱测量表明，随着温度的升高，CCTS的结晶度提高，而拉曼光谱证实的Cu2S第二相可以随退火温度的升高而被抑制。结果表明，CCTS薄膜的晶粒度随退火温度的升高而增大，同时存在轻微的S贫化和锡贫化现象。所有薄膜的带隙都估计在1.31-1.14 eV之间，随着温度的升高几乎呈线性下降，可以很好地用于光伏和热电。
Cu2CdSnS4(CCTS) appears to be a promising absorber material for thin film solar cells and have been deposited on glass substrate by a direct liquid coating method. Effects of sulfurization temperature on the composition, morphology, structural and optical properties of CCTS have been investigated systematically. X-ray diffraction and Raman measurements reveal that the increase of temperature would lead to an improved crystallinity of CCTS and the secondary phase of Cu2S confirmed by Raman spectrum can be suppressed by increasing annealing temperature. The grain size of CCTS thin films is demonstrated to be improved as the annealing temperature increases with slight S-poor and Sn-poor condition. All the thin films have estimated band gap in the range of 1.31–1.14 eV, which decreases almost linearly with the increasing temperature and can be well suited for use in photovoltaics and thermoelectricity.
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