Characterization of individual stacking faults in a wurtzite GaAs nanowire by nanobeam X-ray diffraction
Characterization of individual stacking faults in a wurtzite GaAs nanowire by nanobeam X-ray diffraction
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通过纳米束 X 射线衍射表征纤锌矿 GaAs 纳米线中的单个堆垛层错
DOI:
10.1107/s1600577517009584
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发表时间:
2017
影响因子:
2.5
通讯作者:
V. Holý
中科院分区:
文献类型:
--
作者:
A. Davtyan;S. Lehmann;D. Kriegner;R.R. Zamani;K.A. Dick;D. Bahrami;A. Al- Hassan;S.J. Leake;U. Pietsch;V. Holý
Coherent X-ray diffraction was used to measure the type, quantity and the relative distances between stacking faults along the growth direction of two individual wurtzite GaAs nanowires grown by metalorganic vapour epitaxy. The presented approach is based on the general property of the Patterson function, which is the autocorrelation of the electron density as well as the Fourier transformation of the diffracted intensity distribution of an object. Partial Patterson functions were extracted from the diffracted intensity measured along the [000\bar{1}] direction in the vicinity of the wurtzite 00\bar{1}\bar{5} Bragg peak. The maxima of the Patterson function encode both the distances between the fault planes and the type of the fault planes with the sensitivity of a single atomic bilayer. The positions of the fault planes are deduced from the positions and shapes of the maxima of the Patterson function and they are in excellent agreement with the positions found with transmission electron microscopy of the same nanowire.
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DOI:
--
发表时间:
2009
期刊:
影响因子:
--
作者:
V. Chamard;Antonio F. Díaz;Julian Stangl;S. Labat
通讯作者:
S. Labat
影响因子:
2.5
作者:
M. Köhl;P. Schroth;T. Baumbach
通讯作者:
T. Baumbach
影响因子:
6.1
作者:
Kriegner D;Wintersberger E;Stangl J
通讯作者:
Stangl J
DOI:
--
发表时间:
2013
期刊:
影响因子:
--
作者:
J. Stangl;C. Mocuta;V. Chamard;D. Carbone
通讯作者:
D. Carbone
影响因子:
3.3
作者:
Favre-Nicolin, V.;Mastropietro, F.;Robinson, I. K.
通讯作者:
Robinson, I. K.