Characterization of individual stacking faults in a wurtzite GaAs nanowire by nanobeam X-ray diffraction

Characterization of individual stacking faults in a wurtzite GaAs nanowire by nanobeam X-ray diffraction
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通过纳米束 X 射线衍射表征纤锌矿 GaAs 纳米线中的单个堆垛层错

DOI:
10.1107/s1600577517009584
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发表时间:
2017
影响因子:
2.5
通讯作者:
V. Holý
V. Holý
中科院分区:
物理与天体物理3区
文献类型:
--
作者:
A. Davtyan;S. Lehmann;D. Kriegner;R.R. Zamani;K.A. Dick;D. Bahrami;A. Al- Hassan;S.J. Leake;U. Pietsch;V. Holý

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用X射线相干衍射法测量了两条由金属有机气相外延生长的纤锌矿型GaAs纳米线沿着生长方向的层错类型、数量和层错之间的相对距离。所提出的方法是基于帕特森函数的一般属性,这是电子密度的自相关性以及物体的衍射强度分布的傅里叶变换。从纤锌矿00\bar {1}\bar{5}布拉格峰附近沿沿着[000\bar {1}]方向测量的衍射强度中提取部分Patterson函数。Patterson函数的最大值以单个原子双层的灵敏度编码断层面之间的距离和断层面的类型。的断层平面的位置推导出的帕特森函数的最大值的位置和形状,它们是在很好的协议与透射电子显微镜发现的相同的纳米线的位置。
Coherent X-ray diffraction was used to measure the type, quantity and the relative distances between stacking faults along the growth direction of two individual wurtzite GaAs nanowires grown by metalorganic vapour epitaxy. The presented approach is based on the general property of the Patterson function, which is the autocorrelation of the electron density as well as the Fourier transformation of the diffracted intensity distribution of an object. Partial Patterson functions were extracted from the diffracted intensity measured along the [000\bar{1}] direction in the vicinity of the wurtzite 00\bar{1}\bar{5} Bragg peak. The maxima of the Patterson function encode both the distances between the fault planes and the type of the fault planes with the sensitivity of a single atomic bilayer. The positions of the fault planes are deduced from the positions and shapes of the maxima of the Patterson function and they are in excellent agreement with the positions found with transmission electron microscopy of the same nanowire.
用相干 X 射线研究 InAs 纳米线的结构
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