Thermal and Electrical Reliability Tests of Air-Gap Through-Silicon Vias
Thermal and Electrical Reliability Tests of Air-Gap Through-Silicon Vias
复制标题
气隙硅通孔的热可靠性和电可靠性测试
DOI：
10.1109/tdmr.2014.2386322
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发表时间：
2015-03
影响因子：
2
通讯作者：
Wang, Zheyao
中科院分区：
文献类型：
--
作者：
Huang, Cui;Liu, Ran;Wang, Zheyao
带气隙的硅通孔（TSV）作为隔离器是为了减小TSV电容和解决与热机械应力相关的可靠性问题而发展起来的。本文通过测量tsv的C-V、I-V和电阻，在热冲击、温度变化和电压斜坡方面对气隙tsv的可靠性进行了评估。进行热冲击试验以评价气隙的隔热性能和热机械稳定性。采用温度变化的方法研究了高温对气隙tsv电特性的影响。进行了电压斜坡试验，获得了随时间变化的介质击穿，以评估气隙的完整性和固有阻挡能力。初步结果表明，气隙tsv具有良好的热稳定性、优异的介电性能以及令人满意的结构和势垒稳定性。
Through-silicon vias (TSVs) with air gaps as the isolators have been developed to reduce the TSV capacitance and to solve the reliability problems associated with thermomechanical stresses. This paper reports the reliability assessment of the air-gap TSVs by measuring the C-V, I-V, and resistance of the TSVs in terms of thermal and electrical stresses with a focus on thermal shock, temperature variations, and voltage ramps. Thermal shock tests are performed to evaluate the insulation capability and the thermomechanical stability of the air gaps. Temperature variations are implemented to investigate the influences of high temperatures on the electrical characteristics of the air-gap TSVs. Voltage ramp tests are carried out, and the time-dependent dielectric breakdown is obtained to evaluate the integrity of the air gaps and the intrinsic barrier capability. The preliminary results show that the air-gap TSVs have good thermal stability, excellent dielectric property, and satisfactory structure and barrier stability.
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DOI：
10.1109/tdmr.2012.2189212
发表时间：
2012-02
影响因子：
2
作者：
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DOI：
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发表时间：
2001-09
期刊：
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影响因子：
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作者：
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通讯作者：
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DOI：
10.1109/tdmr.2011.2176126
发表时间：
2012-06
影响因子：
2
作者：
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通讯作者：
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影响因子：
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影响因子：
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