Probing the origins of electroresistance switching behavior in ferroelectric thin films
Probing the origins of electroresistance switching behavior in ferroelectric thin films
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探究铁电薄膜中电阻切换行为的起源
DOI：
10.1063/1.5119970
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发表时间：
2019-12
影响因子：
4
通讯作者：
Duan Chun-Gang
中科院分区：
文献类型：
--
作者：
Ren Zhong-Qi;Liu Yan-Dong;Bao Si-Yao;Yang Nan;Zhong Ni;Tang Xiao-Dong;Xiang Ping-Hua;Duan Chun-Gang
近年来，利用扫描探针显微镜对铁电薄膜进行了系统的研究。研究表明，表面电势是注入电荷和极化电荷共同作用的结果。表面电势与两种电荷之间的关系通常通过扫描开尔文探针显微镜(SKPM)来研究。通常，SKPM研究表明，表面电荷分布是由极化过程中使用导电AFM针尖捕获的注入电荷主导的，而不是由极化电荷主导的。注入电荷的存在导致了关于电阻开关行为起源的争论。在本研究中，在优化的热处理过程中观察到了注入电荷的松弛。这导致极化电荷在注入电荷中占据主导地位。通过导电原子力显微镜(C-AFM)观察到注入膜和极化电荷主导膜具有不同的电阻转换特性。我们的研究扩展了区分电阻转换行为是由电荷捕获/脱陷还是铁电极化驱动的方法。这为结合压电力显微镜、SKPM和C-AFM对铁电薄膜的电阻转换来源进行分类提供了一种有效的途径。近年来，利用扫描探针显微镜对铁电薄膜进行了系统的研究。研究表明，表面电势是注入电荷和极化电荷共同作用的结果。表面电势与两种电荷之间的关系通常通过扫描开尔文探针显微镜(SKPM)来研究。通常，SKPM研究表明，表面电荷分布是由极化过程中使用导电AFM针尖捕获的注入电荷主导的，而不是由极化电荷主导的。注入电荷的存在导致了关于电阻开关行为起源的争论。在本研究中，在优化的热处理过程中观察到了注入电荷的松弛。这导致极化电荷在注入电荷中占据主导地位。通过导电原子力显微镜(C-AFM)观察到注入膜和极化电荷主导膜具有不同的电阻转换特性。我们的研究扩展。
Ferroelectric thin films have been systematically investigated via scanning probe microscopy in recent years. Research indicates that the surface potential is the combined result of injected and polarization charges. The relationships between surface potentials and the two types of charges are usually investigated via scanning Kelvin probe microscopy (SKPM). Typically, SKPM investigations indicate that the surface charge distribution is dominated by injected charges trapped during poling using a conductive AFM tip rather than by polarization charges. The presence of injected charges leads to controversy concerning the origins of resistive switching behavior. In this study, relaxation of injected charges was observed during an optimized thermal treatment. This caused polarization charges to dominate over injected charges. Different electroresistance switching characterizations were observed via conductive atomic force microscopy (C-AFM) of injected and polarization charge-dominated films. Our research extends the methods of distinguishing whether electroresistance switching behavior is driven by charge trapping/detrapping or ferroelectric polarization. This provides an effective approach to classifying the origins of electroresistance switching in ferroelectric thin films by combining piezoelectric force microscopy, SKPM, and C-AFM.Ferroelectric thin films have been systematically investigated via scanning probe microscopy in recent years. Research indicates that the surface potential is the combined result of injected and polarization charges. The relationships between surface potentials and the two types of charges are usually investigated via scanning Kelvin probe microscopy (SKPM). Typically, SKPM investigations indicate that the surface charge distribution is dominated by injected charges trapped during poling using a conductive AFM tip rather than by polarization charges. The presence of injected charges leads to controversy concerning the origins of resistive switching behavior. In this study, relaxation of injected charges was observed during an optimized thermal treatment. This caused polarization charges to dominate over injected charges. Different electroresistance switching characterizations were observed via conductive atomic force microscopy (C-AFM) of injected and polarization charge-dominated films. Our research exte...
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