The effect of Ar flow rate in the growth of SiGe:H thin films by PECVD
The effect of Ar flow rate in the growth of SiGe:H thin films by PECVD
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氩气流量对PECVD生长SiGe:H薄膜的影响
DOI：
10.1016/j.apsusc.2010.05.019
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发表时间：
2010-09
影响因子：
6.7
通讯作者：
中科院分区：
文献类型：
--
作者：
在本文中，通过研究Ar流量对氢化硅锗（SiGe:H）薄膜沉积速率和结构性能的影响，我们发现稀释气体中Ar的添加由于增强了源气体的解离和对生长表面的轰击，有效地提高了沉积速率和结晶度。氢含量和SE结果表明，缺陷密度和空隙体积分数随着Ar流量的增加而增加，这归因于向薄膜中注入更高能量的Ar+离子导致原子的位移以及氩被薄膜捕获的可能性增加。通过吸收系数和暗电导率测量研究了其光电性质，并给出了合理的解释。
In this article, by investigating the influence of Ar flow rate on deposition rate and structural properties of hydrogenated silicon germanium (SiGe:H) films, we showed that the addition of Ar in the diluted gas efficiently improve the deposition rate and crystallinity due to an enhanced dissociation of source gases and bombardment on growth surface. The hydrogen content and SE results suggest that the defect density and void volume fraction increases with increasing Ar flow rate, which is attributed to the injection of higher energy Ar+ions into the film led to a displacement of the atoms and an increased possibility of argon being trapped with the films. The optoelectronic properties are investigated by absorption coefficient and dark conductivity measurements and a reasonable explanation is presented.
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影响因子：
3.2
作者：
W. Pan;K. Fujiwara;N. Usami;T. Ujihara;K. Nakajima;R. Shimokawa
通讯作者：
W. Pan;K. Fujiwara;N. Usami;T. Ujihara;K. Nakajima;R. Shimokawa
影响因子：
1.7
作者：
Zhang Liping;Zhang Jian-jun;Shang Ze-Ren;Hu Zeng-Xin;Geng Xin-hua;Zhao Ying
通讯作者：
Zhang Liping;Zhang Jian-jun;Shang Ze-Ren;Hu Zeng-Xin;Geng Xin-hua;Zhao Ying
影响因子：
3.2
作者：
M. H. Gullanar;Huanyang Chen;W. Wei;R. Cui;W. Shen
通讯作者：
M. H. Gullanar;Huanyang Chen;W. Wei;R. Cui;W. Shen
影响因子：
2.1
作者：
A. Mahan;Y. Xu;L. Gedvilas;D. Williamson
通讯作者：
A. Mahan;Y. Xu;L. Gedvilas;D. Williamson
影响因子：
3.5
作者：
M. Krause;H. Stiebig;R. Carius;U. Zastrow-;H. Bay;H. Wagner
通讯作者：
M. Krause;H. Stiebig;R. Carius;U. Zastrow-;H. Bay;H. Wagner