Gas sensors based on semiconducting nanowire field-effect transistors.

Gas sensors based on semiconducting nanowire field-effect transistors.
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基于半导体纳米线场效应晶体管的气体传感器

DOI:
10.3390/s140917406
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发表时间:
2014-09-17
期刊:
Sensors (Basel, Switzerland)
影响因子:
--
通讯作者:
Wan Q
Wan Q
中科院分区:
其他
文献类型:
--
作者:
Feng P;Shao F;Shi Y;Wan Q

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一维半导体纳米结构是用于制造气体传感器的独特传感材料。本文全面综述了基于半导体纳米线场效应晶体管 (FET) 的气体传感器。单独的纳米线或纳米线网络膜通常用作有源检测通道。在这些传感器中,第三个电极作为栅极,用于调节纳米线的载流子浓度,以实现更好的传感性能,包括灵敏度、选择性和响应时间等。FET参数可以通过目标气体的存在来调节,其变化与气体分子的类型和浓度密切相关。此外,金属装饰、局部加热和光照射等额外控制可以与栅电极相结合,以调整纳米线通道并实现更有效的气体传感。借助微制造技术,这些传感器可以集成到智能系统中。最后,讨论了纳米线场效应气体传感器未来研究和应用的一些挑战。
One-dimensional semiconductor nanostructures are unique sensing materials for the fabrication of gas sensors. In this article, gas sensors based on semiconducting nanowire field-effect transistors (FETs) are comprehensively reviewed. Individual nanowires or nanowire network films are usually used as the active detecting channels. In these sensors, a third electrode, which serves as the gate, is used to tune the carrier concentration of the nanowires to realize better sensing performance, including sensitivity, selectivity and response time, etc. The FET parameters can be modulated by the presence of the target gases and their change relate closely to the type and concentration of the gas molecules. In addition, extra controls such as metal decoration, local heating and light irradiation can be combined with the gate electrode to tune the nanowire channel and realize more effective gas sensing. With the help of micro-fabrication techniques, these sensors can be integrated into smart systems. Finally, some challenges for the future investigation and application of nanowire field-effect gas sensors are discussed.
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