Gas sensors based on semiconducting nanowire field-effect transistors.
Gas sensors based on semiconducting nanowire field-effect transistors.
复制标题
基于半导体纳米线场效应晶体管的气体传感器
DOI:
10.3390/s140917406
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发表时间:
2014-09-17
期刊:
影响因子:
--
通讯作者:
Wan Q
中科院分区:
文献类型:
--
作者:
Feng P;Shao F;Shi Y;Wan Q
One-dimensional semiconductor nanostructures are unique sensing materials for the fabrication of gas sensors. In this article, gas sensors based on semiconducting nanowire field-effect transistors (FETs) are comprehensively reviewed. Individual nanowires or nanowire network films are usually used as the active detecting channels. In these sensors, a third electrode, which serves as the gate, is used to tune the carrier concentration of the nanowires to realize better sensing performance, including sensitivity, selectivity and response time, etc. The FET parameters can be modulated by the presence of the target gases and their change relate closely to the type and concentration of the gas molecules. In addition, extra controls such as metal decoration, local heating and light irradiation can be combined with the gate electrode to tune the nanowire channel and realize more effective gas sensing. With the help of micro-fabrication techniques, these sensors can be integrated into smart systems. Finally, some challenges for the future investigation and application of nanowire field-effect gas sensors are discussed.
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