Theoretical analysis of the inter-diffusion coefficients in the AlGaInP material quantum well intermixing
Theoretical analysis of the inter-diffusion coefficients in the AlGaInP material quantum well intermixing
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AlGaInP材料量子阱混合中相互扩散系数的理论分析
DOI：
10.1016/j.mssp.2012.12.017
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发表时间：
2013-06
影响因子：
4.1
通讯作者：
Ma, X. J.
中科院分区：
文献类型：
--
作者：
Lin, T.;Chen, R. G.;Zhang, H. Q.;Li, C.;Ma, X. J.
量子阱混合（QWI）已广泛应用于修改半导体材料的带隙、后生长；人们已经研究了它用于制造激光腔的非吸收镜区域以提高输出功率。在这项工作中，简要介绍了 QWI 机制。分别针对奇数和偶数阱以数学方式获得多量子阱中的浓度分布函数。此外，采用金属有机气相外延技术制备了650nm AlGaInP/GaInP量子阱晶圆，并通过Zn杂质扩散完成了一系列量子阱混合实验。基于实验数据，模拟浓度分布函数并计算Al和Ga之间的相互扩散系数。最后，讨论了QWI对相互扩散系数的影响。
Quantum well intermixing (QWI) has been widely used in modifying the bandgap of semiconductor materials, post-growth; it has been investigated in fabricating non-absorbing mirror regions of laser cavities to improve output power. In this work, the QWI mechanism is briefly introduced. A concentration distribution function in multiple quantum wells is mathematically obtained for odd and even wells respectively. In addition, a 650nm AlGaInP/GaInP quantum well wafer is fabricated by metal organic vapor phase epitaxy, and a series of quantum well intermixing experiments is accomplished by Zn impurity diffusions. Based on experimental data, a concentration distribution function is simulated and an inter-diffusion coefficient between Al and Ga is calculated. Finally, the effects of QWI on the inter-diffusion coefficient are discussed.
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影响因子：
6.7
作者：
J. Arokiaraj;H. Djie;T. Mei
通讯作者：
J. Arokiaraj;H. Djie;T. Mei
影响因子：
1.8
作者：
D. Nie;T. Mei;H. Djie;M. Chin;X. Tang;Y. Wang
通讯作者：
D. Nie;T. Mei;H. Djie;M. Chin;X. Tang;Y. Wang
影响因子：
2.1
作者：
N. Bickel;P. LiKamWa
通讯作者：
N. Bickel;P. LiKamWa
影响因子：
2.5
作者：
E. Li;B. Weiss;K. Chan
通讯作者：
E. Li;B. Weiss;K. Chan
影响因子：
4
作者：
T. Yokogawa;P. Floyd;M. Hashemi;J. Merz;H. Luo;J. Furdyna
通讯作者：
T. Yokogawa;P. Floyd;M. Hashemi;J. Merz;H. Luo;J. Furdyna