A numerical approach to quasi-ballistic transport and plasma oscillations in junctionless nanowire transistors
A numerical approach to quasi-ballistic transport and plasma oscillations in junctionless nanowire transistors
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无结纳米线晶体管中准弹道输运和等离子体振荡的数值方法
DOI：
10.1007/s10825-020-01488-4
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发表时间：
2020
影响因子：
2.1
通讯作者：
C. Jungemann
中科院分区：
文献类型：
--
作者：
M. Noei;T. Linn;C. Jungemann
本文提出了一个基于泊松、Schrödinger和玻尔兹曼输运方程自一致解的纳米线晶体管直流和射频小信号模拟的数值框架，该框架在从弱到强粒子散射的整个范围内都是稳定的。该方法克服了将玻尔兹曼输运方程转换为能量空间的缺陷，能够处理准弹道情况。这是研究等离子体共振和其他高迁移率现象的关键要求。内部求解器与先前开发的基于h变换的常规硅晶体管强散射模拟器的结果进行了验证。然后，将其结果与基于矩的模型的结果进行了比较，表明这些模型不能提供准弹道输运区电子动力学的令人满意的描述。此外，在接触处输运模型的内部边界条件对等离子体共振有显著的影响，而基于物理的热浴边界条件对等离子体共振有强烈的抑制作用。
A numerical framework for DC and RF small-signal simulations of nanowire transistors is presented, which is based on the self-consistent solution of the Poisson, Schrödinger, and Boltzmann transport equations and is stable for the entire range from weak to strong particle scattering. The proposed approach does not suffer from the deficiencies due to the transformation of the Boltzmann transport equation into the energy space and can handle the quasi-ballistic case. This is a key requirement for the investigation of plasma resonances and other high-mobility phenomena. The in-house solver is validated with results of a previously developed simulator based on theH-transformation for a conventionalsilicon transistor with strong scattering. Then, its results are compared with those of moments-based models and it is shown that these do not provide a satisfactory description of the electron dynamics in the quasi-ballistic transport regime. Furthermore, the internal boundary conditions of the transport models at the contacts are found to have a significant impact on plasma resonances and the physics-based thermal-bath boundary condition strongly suppresses them.
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