High-performance self-driven ultraviolet photodetector based on SnO2 p-n homojunction
High-performance self-driven ultraviolet photodetector based on SnO2 p-n homojunction
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基于SnO2 p-n同质结的高性能自驱动紫外光电探测器
DOI：
10.1016/j.optmat.2022.112571
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发表时间：
2022-07
影响因子：
3.9
通讯作者：
Yunbin He
中科院分区：
文献类型：
--
作者：
Bohan Liu;Mingkai Li;Wang Fu;Pan Ye;Wentao E;Xinglin Xiao;Haoran Wei;Yinmei Lu;Yunbin He
利用前人研究获得的高质量的p型外延sno2:Mg薄膜，利用脉冲激光沉积技术在c-蓝宝石衬底上制备了p- sno2:Mg/n- sno2同质结紫外探测器。p- sno2:Mg/n- sno2均结表现出典型的二极管行为，在2v和- 2v下的整流比接近201。与传统的金属-半导体-金属sno2基紫外光电探测器相比，本发明的p-n同质结光电探测器在0 V偏置下可自供电。p- sno2:Mg/n- sno2同质结界面损耗区内的内置电场使光生电子空穴对快速分离，使得光电探测器具有超快的响应速度（τ r = 0.57 ms, τ d = 0.64 ms）。此外，在290 nm光照射下，探测器在1.177 mW/ cm2下的最大光电流I p为1.5 nA。同时，与传统探测器相比，它具有1.55 mA/W的高响应度和9.8 × 10 10jones的高探测率。这些结果表明，sno2同质结在紫外光电探测器和其他功率器件上具有很大的应用潜力。•首次制备了基于sno2的p-n同质结紫外探测器。•估计紫外光电探测器的响应时间约为0.6 ms。•基于二氧化硅的p-n同结紫外光电探测器可以在零偏置条件下工作（自供电）。•光电探测器在0V偏置下具有9.8 × 1010的高探测率。•sno2基p-n同结紫外探测器的截止波长小于320 nm。
Taking advantage of the high-quality p-type epitaxial SnO 2 :Mg film achieved in our previous study, a p-SnO 2 :Mg/n-SnO 2 homojunction based ultraviolet photodetector was fabricated on a c-sapphire substrate by pulsed laser deposition in this work. The p-SnO 2 :Mg/n-SnO 2 homojunction exhibits a typical diode behavior, with a rectifying ratio approaching 201 at 2 V and −2 V. Compared with the traditional metal-semiconductor-metal SnO 2 -based ultraviolet photodetector, the present p-n homojunction based photodetector is self-powered under 0 V bias. The built-in electric field in the interface depletion region of the p-SnO 2 :Mg/n-SnO 2 homojunction separates photogenerated electron-hole pairs rapidly, which renders the photodetector an ultra-fast response speed ( τ r = 0.57 ms, τ d = 0.64 ms). In addition, the detector exhibits a maximum photocurrent I p of 1.5 nA under illumination with 290 nm light at 1.177 mW/cm 2 . At the same time, it shows a higher responsivity of 1.55 mA/W, and a higher detectivity of 9.8 × 10 10 Jones, than traditional detectors. These results imply great application potential of SnO 2 homojunction for UV photodetectors as well as other power devices. • Firstly fabricating SnO 2 -based p-n homojunction UV photodetectors. • Response time of the UV photodetectors was estimated to be short as approximately 0.6 ms. • The SnO 2 -based p-n homojunction UV photodetectors can operate under zero bias conditions (self-powered). • The photodetectors has a high detectivity of 9.8 × 10 10 under 0V bias. • Cut-off wavelengths of the SnO 2 -based p-n homojunction UV photodetectors are less than 320 nm.
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