Device design for high-performance bifacial Cu(In,Ga)Se2 solar cells under front and rear illuminations
Device design for high-performance bifacial Cu(In,Ga)Se2 solar cells under front and rear illuminations
复制标题
前后光照下高性能双面Cu(In,Ga)Se2太阳能电池器件设计
DOI:
10.1016/j.solener.2021.01.075
复制
发表时间:
2021
期刊:
影响因子:
6.7
通讯作者:
Minemoto Takashi
中科院分区:
文献类型:
--
作者:
Nishimura Takahito;Chantana Jakapan;Mavlonov Abdurashid;Kawano Yu;Masuda Taizo;Minemoto Takashi
For bifacial solar cells, a gain of 10–50% of the electric power generation by harvesting albedo radiation is expected compared with mono-facial solar cells. Cu(In,Ga)Se2(CIGSe) is a promising photovoltaic material owing to its unique physical properties, whereas the knowledge of the bifacial CIGSe solar cells is not fully understood. In this article, high efficiencies under front and rear illuminations for the bifacial CIGSe solar cells are theoretically demonstrated. An adequate bandgap grading by Ga/(Ga + In) ratio in the CIGSe layer leads to a shift of the depth in carrier-generation towardpn-junction and driving force of electron transport by electric field, resulting in improvement of device performance. On the other hand, it is also disclosed that the effect of bandgap grading alone is not enough to obtain the high short-circuit current density (JSC) under rear illumination. It is found that improvement of a CIGSe quality and an introduction of a rear surface layer contribute to reduction of the carrier recombination at the bulk and back contact, respectively, leading to enhancedJSCin rear illumination. Furthermore, the effect of optical path length by the surface texture is discussed. These findings indicate a guideline for the promising high-performance bifacial CIGSe solar cells.
登录
查看更多内容
DOI:
10.1016/j.egypro.2015.07.051
发表时间:
2015
期刊:
Energy Procedia
影响因子:
--
作者:
G. Janssen;B. V. Aken;A. Carr;A. Mewe
通讯作者:
A. Mewe
影响因子:
3.2
作者:
M. Turcu;I. Kötschau;U. Rau
通讯作者:
U. Rau
DOI:
10.1002/pip.2162
发表时间:
2012-08
期刊:
Progress in Photovoltaics: Research and Applications
影响因子:
--
作者:
Z. J. Li-Kao;N. Naghavi;F. Erfurth;J. Guillemoles;I. Gérard;A. Etcheberry;J. Pelouard;S. Collin;G. Voorwinden;D. Lincot
通讯作者:
Z. J. Li-Kao;N. Naghavi;F. Erfurth;J. Guillemoles;I. Gérard;A. Etcheberry;J. Pelouard;S. Collin;G. Voorwinden;D. Lincot
影响因子:
3
作者:
T. Masuda;Shogo Hirai;Mikiya Inoue;Jakapan Chantana;Yukinori Kudo;T. Minemoto
通讯作者:
T. Minemoto
影响因子:
3.2
作者:
J. Toušek;J. Toušková;A. Poruba;P. Hlídek;J. Lorincik
通讯作者:
J. Lorincik