Electromagnetic induction heating for single crystal graphene growth: morphology control by rapid heating and quenching.
Electromagnetic induction heating for single crystal graphene growth: morphology control by rapid heating and quenching.
复制标题
单晶石墨烯生长的电磁感应加热：通过快速加热和淬火控制形貌
DOI：
10.1038/srep09034
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发表时间：
2015-03-12
影响因子：
4.6
通讯作者：
Guo T
中科院分区：
文献类型：
--
作者：
Wu C;Li F;Chen W;Veeramalai CP;Ooi PC;Guo T
直接观察单晶石墨烯的生长及其形态演变，对于理解石墨烯生长的物理化学机制和实现单晶石墨烯的晶圆尺度具有重要意义。本研究通过开发一种基于电磁感应加热的局部加热快速淬火化学气相沉积（CVD）系统，展示了不同形状的单晶石墨烯的受控形成，并直接观察了单晶石墨烯的形状演变。重要的是，通过改变生长条件，首次可以很容易地获得圆形、六边形和枝晶单晶石墨烯畴的合理控制。系统研究表明，石墨烯的成核只发生在初始阶段，而由于表面限制效应，石墨烯的畴密度与生长温度无关。此外，石墨烯畴形状演变的直接观察用于识别竞争的生长机制，包括扩散限制，附着限制和分离限制过程。我们的研究不仅为形态控制石墨烯的合成提供了一种新的方法，而且为单晶石墨烯的生长动力学提供了基本的见解。
The direct observation of single crystal graphene growth and its shape evolution is of fundamental importance to the understanding of graphene growth physicochemical mechanisms and the achievement of wafer-scale single crystalline graphene. Here we demonstrate the controlled formation of single crystal graphene with varying shapes and directly observe the shape evolution of single crystal graphene by developing a localized-heating and rapid-quenching chemical vapor deposition (CVD) system based on electromagnetic induction heating. Importantly, rational control of circular, hexagonal and dendritic single crystalline graphene domains can be readily obtained for the first time by changing the growth condition. Systematic studies suggest that the graphene nucleation only occurs during the initial stage, while the domain density is independent of the growth temperatures due to the surface-limiting effect. In addition, the direct observation of graphene domain shape evolution is employed for the identification of competing growth mechanisms including diffusion-limited, attachment-limited and detachment-limited processes. Our study not only provides a novel method for morphology-controlled graphene synthesis, but also offers fundamental insights into the kinetics of single crystal graphene growth.
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影响因子：
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作者：
WITTEN, TA;SANDER, LM
通讯作者：
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