Design optimization of silicon-based 1.55 μm InAs/InGaAs quantum dot square microcavity lasers with output waveguides
Design optimization of silicon-based 1.55 μm InAs/InGaAs quantum dot square microcavity lasers with output waveguides
复制标题
带输出波导的硅基1.55 μm InAs/InGaAs量子点方形微腔激光器的设计优化
DOI：
10.1088/1555-6611/abf732
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发表时间：
2021
期刊：
影响因子：
1.2
通讯作者：
Haiming Ji
中科院分区：
文献类型：
--
作者：
Yuanqing Yang;Jun Wang;Lina Zhu;Weirong Chen;Guofeng Wu;Haijing Wang;Yanxing Jia;Yongqing Huang;Xiaomin Ren;Shuai Luo;Haiming Ji
Abstract. We optimize the structure of a silicon-based InAs/InGaAs quantum dot square microcavity laser with an output waveguide structure. By designing a new laser structure, the emission wavelength is extended to 1550 nm. We investigate the structure parameters that affect the quality factor and optical mode of the square microcavity, including the side length of the microcavity, the width of the output waveguide, the cladding layer thickness and the etching depth. By connecting the output waveguide at the edge-midpoint of the square microcavity, both the unidirectional emission and mode selectivity can be obtained, which avoids mode competition. The 1550 nm wavelength single-mode laser is beneficial and has reat significance for the development of silicon-based optoelectronic integration.
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