A highly stable, nanotube-enhanced, CMOS-MEMS thermal emitter for mid-IR gas sensing.

A highly stable, nanotube-enhanced, CMOS-MEMS thermal emitter for mid-IR gas sensing.
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用于中红外气体传感的高稳定性、纳米管增强型CMOS MEMS热发射器。

DOI:
10.1038/s41598-021-02121-5
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发表时间:
2021-11-25
期刊:
影响因子:
4.6
通讯作者:
Udrea F
Udrea F
中科院分区:
综合性期刊3区
文献类型:
--
作者:
Popa D;Hopper R;Ali SZ;Cole MT;Fan Y;Veigang-Radulescu VP;Chikkaraddy R;Nallala J;Xing Y;Alexander-Webber J;Hofmann S;De Luca A;Gardner JW;Udrea F

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在许多社会经济和工业因素的推动下,气体传感器市场正在快速增长。中红外(MIR)气体传感器为医疗保健、智能家居和汽车行业中越来越多的传感应用提供卓越的性能。获得低成本、小型化、节能的光源对于MIR传感器的单片集成至关重要。在这里,我们提出了一种片上宽带热MIR源制作的互补金属氧化物半导体(CMOS)微热板与电介质封装的碳纳米管(CNT)黑体层相结合。微热板在制造期间用作微反应器以促进CNT层的高温(>700 ℃)生长,并且还用于生长后的热退火。我们证明,第一次,在空气中的设备与电介质封装的CNT层在加热器温度高于600 ℃,稳定的扩展操作。演示的设备在整个MIR光谱中表现出几乎统一的发射率,为物联网的低成本,高度集成的MIR光谱提供了理想的解决方案。
The gas sensor market is growing fast, driven by many socioeconomic and industrial factors. Mid-infrared (MIR) gas sensors offer excellent performance for an increasing number of sensing applications in healthcare, smart homes, and the automotive sector. Having access to low-cost, miniaturized, energy efficient light sources is of critical importance for the monolithic integration of MIR sensors. Here, we present an on-chip broadband thermal MIR source fabricated by combining a complementary metal oxide semiconductor (CMOS) micro-hotplate with a dielectric-encapsulated carbon nanotube (CNT) blackbody layer. The micro-hotplate was used during fabrication as a micro-reactor to facilitate high temperature (>700 C) growth of the CNT layer and also for post-growth thermal annealing. We demonstrate, for the first time, stable extended operation in air of devices with a dielectric-encapsulated CNT layer at heater temperatures above 600 C. The demonstrated devices exhibit almost unitary emissivity across the entire MIR spectrum, offering an ideal solution for low-cost, highly-integrated MIR spectroscopy for the Internet of Things.
DOI: 10.1063/1.3491022
发表时间: 2010-10-15
影响因子: 3.2
作者:
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通讯作者: Giri, P. K.
DOI: 10.1115/1.4049292
发表时间: 2021-06-01
影响因子: 1.6
作者:
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DOI: 10.1109/jsen.2015.2464693
发表时间: 2015-12-01
影响因子: 4.3
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DOI: 10.1088/0957-4484/21/48/485301
发表时间: 2010-12-03
期刊: NANOTECHNOLOGY
影响因子: 3.5
作者:
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通讯作者: Udrea, Florin
DOI: 10.1073/pnas.0900155106
发表时间: 2009-04-14
影响因子: 11.1
作者:
Mizuno, Kohei;Ishii, Juntaro;Hata, Kenji
通讯作者: Hata, Kenji