Temperature-dependent ferroelectric and dielectric properties of Bi3.25La0.75Ti3O12 thin films
Temperature-dependent ferroelectric and dielectric properties of Bi3.25La0.75Ti3O12 thin films
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Bi3.25La0.75Ti3O12 薄膜的温度依赖性铁电和介电性能
DOI：
10.1016/j.apsusc.2009.10.089
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发表时间：
2010-02
影响因子：
6.7
通讯作者：
Zhang, Shan-Tao
中科院分区：
文献类型：
--
作者：
Yuan, Guo-Liang;Zhang, Chong;Chen, Zhong;Zhang, Shan-Tao
为了研究铁电薄膜的铁电和介电性能与温度的关系，采用脉冲激光沉积法在镀Pt的硅衬底上制备了Bi3.25La0.75Ti3O12（BLT）薄膜。在80 K至室温的较宽温度范围内研究了样品的铁电和介电行为。饱和极化（Psat）随温度和电场的降低而降低，而剩余极化（Pr）则表现出更复杂的温度依赖性。这些结果可以很好地解释基于温度相关的带电缺陷-畴壁相互作用模型，可能有助于进一步理解畴变行为。基于这些结果，提出了一种研究温度相关铁电疲劳的替代方法，并进行了实验研究。测得的疲劳速率被发现是线性依赖于温度，与报告的Pb（Zr，Ti）O3薄膜。温度依赖的膜的介电测量进一步证实了上述解释。
To investigate temperature-dependent ferroelectric and dielectric properties of ferroelectric films, Bi3.25La0.75Ti3O12(BLT) thin films were prepared on Pt-coated silicon substrates by pulsed laser deposition. The ferroelectric and dielectric behaviors have been studied in a wide temperature range from 80K to room temperature. The saturated polarization (Psat) decreases with decreasing temperature and decreasing electric field, whereas remnant polarization (Pr) shows a more complex temperature dependence. These results, which can be well explained based on a temperature-dependent charged defects–domain wall interaction model, might be helpful for further understanding the domain switching behavior. Based on these results, an alternative way to investigate temperature-dependent ferroelectric fatigue is proposed and experimentally carried out. The measured fatigue rate is found to be linearly dependent on temperature, consistent with the report on Pb(Zr,Ti)O3films. Temperature-dependent dielectric measurements of the films further confirm the above explanation.
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影响因子：
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通讯作者：
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