Charge transport mechanisms of graphene/semiconductor Schottky barriers: A theoretical and experimental study
Charge transport mechanisms of graphene/semiconductor Schottky barriers: A theoretical and experimental study
复制标题
石墨烯/半导体肖特基势垒的电荷传输机制：理论和实验研究
DOI：
10.1063/1.4859500
复制
发表时间：
2014-01
影响因子：
3.2
通讯作者：
Yang, Hui
中科院分区：
文献类型：
--
作者：
Fan, Yingmin;Wang, Jianfeng;Ren, Guoqiang;Yang, Hui
石墨烯已被提出作为半导体电子器件和光电子器件的材料。了解石墨烯/半导体肖特基势垒的电荷传输机制对于未来的应用将是至关重要的。本文基于传统的半导体肖特基理论和石墨烯的浮动费米能级，建立了一个描述石墨烯与半导体界面输运机制的理论模型。通过该模型可以估算出接触势垒高度，并与实验结果接近，低于金属/半导体接触的高度。详细的分析表明，势垒高度是界面分离和介电常数的函数，并受半导体界面态的影响。我们的计算表明，这种降低势垒高度的行为是如何由独特的线性电子结构引起的电荷转移引起的石墨烯的费米能级移动引起的。
Graphene has been proposed as a material for semiconductor electronic and optoelectronic devices. Understanding the charge transport mechanisms of graphene/semiconductor Schottky barriers will be crucial for future applications. Here, we report a theoretical model to describe the transport mechanisms at the interface of graphene and semiconductors based on conventional semiconductor Schottky theory and a floating Fermi level of graphene. The contact barrier heights can be estimated through this model and be close to the values obtained from the experiments, which are lower than those of the metal/semiconductor contacts. A detailed analysis reveals that the barrier heights are as the function of the interface separations and dielectric constants, and are influenced by the interfacial states of semiconductors. Our calculations show how this behavior of lowering barrier heights arises from the Fermi level shift of graphene induced by the charge transfer owing to the unique linear electronic structure.
登录
查看更多内容
影响因子：
5.4
作者：
Chen, SH;Liu, L;Wang, TC
通讯作者：
Wang, TC
FeCl3 插层少层石墨片：费米能级的拉曼测定、逐层解耦和稳定性
影响因子：
15
作者：
Zhao, Weijie;Tan, Ping Heng;Ferrari, Andrea C.
通讯作者：
Ferrari, Andrea C.
影响因子：
10.8
作者：
He, Kevin T.;Koepke, Justin C.;Lyding, Joseph W.
通讯作者：
Lyding, Joseph W.
影响因子：
64.8
作者：
Kim, Keun Soo;Zhao, Yue;Hong, Byung Hee
通讯作者：
Hong, Byung Hee
影响因子：
8.6
作者：
Mattausch, Alexander;Pankratov, Oleg
通讯作者：
Pankratov, Oleg