GaAs1−y−zPyBiz, an alternative reduced band gap alloy system lattice-matched to GaAs
GaAs1−y−zPyBiz, an alternative reduced band gap alloy system lattice-matched to GaAs
复制标题
GaAs1−y−zPyBiz，一种与 GaAs 晶格匹配的替代带隙减小合金系统
DOI：
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发表时间：
2014
期刊：
影响因子：
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通讯作者：
T. Kuech
中科院分区：
文献类型：
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作者：
K. Forghani;Y. Guan;M. Losurdo;G. Luo;D. Morgan;S. Babcock;A. Brown;L. Mawst;T. Kuech
研究了替代四元合金系统GaAs 1 −y−zPyBiz中合金的生长和性质。这种材料系统允许通过调整GaAs 1 −y−zPyBiz中的y和z，在很宽的范围内同时独立地调节晶格常数和带隙能量Eg，以用于潜在的近红外和中红外光电应用。高拉伸应变的赝晶薄膜GaAs 1 −yPy（晶格失配应变为1.2%）作为随后添加Bi的主体。通过在GaAs 1 −y−zPyBiz中保持y = 3.3z，产生了与GaAs晶格匹配的合金材料。具有高Bi含量，z = 0.0854，和一个光滑的形态的外延膜实现与测量的带隙能量低至1.11-1.01 eV，晶格匹配的GaAs衬底。密度泛函理论计算用于提供与GaAs晶格匹配的GaAs 1 −y−zPyBiz的带隙的预测模型。
The growth and properties of alloys in the alternative quaternary alloy system GaAs1−y−zPyBiz were explored. This materials system allows simultaneous and independent tuning of lattice constant and band gap energy, Eg, over a wide range for potential near- and mid-infrared optoelectronic applications by adjusting y and z in GaAs1−y−zPyBiz. Highly tensile-strained, pseudomorphic films of GaAs1−yPy with a lattice mismatch strain of ∼1.2% served as the host for the subsequent addition of Bi. Lattice-matched alloy materials to GaAs were generated by holding y ∼ 3.3z in GaAs1−y−zPyBiz. Epitaxial films with both high Bi content, z ∼ 0.0854, and a smooth morphology were realized with measured band gap energies as low as 1.11–1.01 eV, lattice-matched to GaAs substrates. Density functional theory calculations are used to provide a predictive model for the band gap of GaAs1−y−zPyBiz lattice-matched to GaAs.
影响因子：
1.8
作者：
P. Ludewig;Nikolai Knaub;W. Stolz;K. Volz
通讯作者：
P. Ludewig;Nikolai Knaub;W. Stolz;K. Volz
影响因子：
4
作者：
Ludewig, P.;Knaub, N.;Volz, K.
通讯作者：
Volz, K.
影响因子：
1.8
作者：
Bushell, Z. L.;Ludewig, P.;Volz, K.
通讯作者：
Volz, K.