Study of built-in amplifier performance on HV-CMOS sensor for the ATLAS phase-II strip tracker upgrade
Study of built-in amplifier performance on HV-CMOS sensor for the ATLAS phase-II strip tracker upgrade
复制标题
用于ATLAS第二阶段带状跟踪器升级的HV-CMOS传感器内置放大器性能研究
DOI：
10.1016/j.nima.2016.05.007
复制
发表时间：
2016
期刊：
影响因子：
--
通讯作者：
Liang Z
中科院分区：
文献类型：
--
作者：
Liang Z
本文重点研究了集成在高压CMOS硅传感器芯片上的模拟读出电路（内置放大器）的性能及其抗辐射性能。由于CMOS传感器从最小电离粒子（MIP）收集的总电荷比传统平面传感器低10倍，因此在传感器芯片上集成低噪声内置放大器以提高系统的信噪比至关重要。作为ATLAS条带检测器升级研究的一部分，采用0.35 μm高压CMOS工艺制造了一个测试芯片，该芯片包括几个具有不同几何形状的像素阵列，以及独立的内置放大器和像素阵列中的内置放大器。在高达60 Mrad的伽马辐射之前和之后，对像素阵列中的独立放大器和内置放大器的增益和噪声进行测量。特别感兴趣的是作为传感器电容的函数的噪声的变化。我们优化了放大器的配置，使其具有快速上升时间，以适应LHC 25 ns的聚束交叉周期，并测量了包括抖动在内的时序特性。我们的研究结果表明，足够的放大器性能的单片结构中使用的HV-CMOS技术。研究结果已纳入下一次提交的大型结构芯片。
This paper focuses on the performance of analog readout electronics (built-in amplifier) integrated on the high-voltage (HV) CMOS silicon sensor chip, as well as its radiation hardness. Since the total collected charge from minimum ionizing particle (MIP) for the CMOS sensor is 10 times lower than for a conventional planar sensor, it is crucial to integrate a low noise built-in amplifier on the sensor chip to improve the signal to noise ratio of the system. As part of the investigation for the ATLAS strip detector upgrade, a test chip that comprises several pixel arrays with different geometries, as well as standalone built-in amplifiers and built-in amplifiers in pixel arrays has been fabricated in a 0.35 μm high-voltage CMOS process. Measurements of the gain and the noise of both the standalone amplifiers and built-in amplifiers in pixel arrays were performed before and after gamma radiation of up to 60 Mrad. Of special interest is the variation of the noise as a function of the sensor capacitance. We optimized the configuration of the amplifier for a fast rise time to adapt to the LHC bunch crossing period of 25 ns, and measured the timing characteristics including jitter. Our results indicate an adequate amplifier performance for monolithic structures used in HV-CMOS technology. The results have been incorporated in the next submission of a large-structure chip.
登录
查看更多内容
HVCMOS 像素传感器概述
影响因子：
1.3
作者：
I. Peric´
通讯作者：
I. Peric´
高压CMOS技术的粒子像素探测器——新成果
DOI：
10.1016/j.nima.2010.11.090
发表时间：
2011
影响因子：
1.4
作者：
I. Perić;C. Kreidl;P. Fischer
通讯作者：
P. Fischer
DOI：
10.1016/j.nima.2016.05.092
发表时间：
2016-09
影响因子：
1.4
作者：
V. Fadeyev;Z. Galloway;H. Grabas;A. Grillo;Zhijun Liang;F. Martinez-McKinney;A. Seiden;J. Volk;A. Affolder;M. Buckland;L. Meng;K. Arndt;D. Bortoletto;T. Huffman;J. John;S. McMahon;R. Nickerson;P. Phillips;R. Plackett;I. Shipsey;L. Vigani;R. Bates;A. Blue;C. Buttar;K. Kanisauskas;D. Maneuski;M. Benoit;F. D. Bello;P. Caragiulo;A. Dragone;P. Grenier;C. Kenney;F. Rubbo;J. Segal;D. Su;C. Tamma;D. Das;J. Dopke;R. Turchetta;F. Wilson;S. Worm;F. Ehrler;I. Perić;I. Gregor;M. Stanitzki;M. Hoeferkamp;S. Seidel;L. Hommels;G. Kramberger;I. Mandić;M. Mikuž;D. Muenstermann;Rui Wang;J. Zhang;M. Warren;W. Song;Q. Xiu;Hongbo Zhu
通讯作者：
V. Fadeyev;Z. Galloway;H. Grabas;A. Grillo;Zhijun Liang;F. Martinez-McKinney;A. Seiden;J. Volk;A. Affolder;M. Buckland;L. Meng;K. Arndt;D. Bortoletto;T. Huffman;J. John;S. McMahon;R. Nickerson;P. Phillips;R. Plackett;I. Shipsey;L. Vigani;R. Bates;A. Blue;C. Buttar;K. Kanisauskas;D. Maneuski;M. Benoit;F. D. Bello;P. Caragiulo;A. Dragone;P. Grenier;C. Kenney;F. Rubbo;J. Segal;D. Su;C. Tamma;D. Das;J. Dopke;R. Turchetta;F. Wilson;S. Worm;F. Ehrler;I. Perić;I. Gregor;M. Stanitzki;M. Hoeferkamp;S. Seidel;L. Hommels;G. Kramberger;I. Mandić;M. Mikuž;D. Muenstermann;Rui Wang;J. Zhang;M. Warren;W. Song;Q. Xiu;Hongbo Zhu
DOI：
10.1016/j.nima.2007.07.115
发表时间：
2007-12-01
影响因子：
1.4
作者：
Peric, Ivan
通讯作者：
Peric, Ivan