Influence of Different Device Structures on the Degradation for Trench-Gate SiC MOSFETs: Taking Avalanche Stress as an Example.
Influence of Different Device Structures on the Degradation for Trench-Gate SiC MOSFETs: Taking Avalanche Stress as an Example.
复制标题
不同设备结构对沟槽壁icsosfets降解的影响：以雪崩应力为例。
DOI：
10.3390/ma15020457
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发表时间：
2022-01-08
期刊：
影响因子：
--
通讯作者：
Bai S
中科院分区：
文献类型：
--
作者：
Wei Z;Fu H;Yan X;Li S;Zhang L;Wei J;Liu S;Sun W;Wu W;Bai S
本文研究了不同结构的沟槽栅SiC金属氧化物半导体场效应晶体管（MOSFET）的电学特性退化规律。选择了两种最先进的商用沟槽产品，即非对称沟槽SiC MOSFET和双沟槽SiC MOSFET作为目标器件。监测由重复雪崩应力引起的不一致的退化趋势。对于双沟槽器件，导通特性得到改善，但栅-漏电容（Cgd）严重增加。这是因为在雪崩过程中，正电荷被注入到底栅氧化层中，这是由高氧化物电子场（Eox）和高碰撞电离率（I.I.）那里同时，对于非对称沟槽SiC MOSFET，在高栅偏置条件下的I-V曲线和Cgd保持相对稳定，而沟槽底部被深P+阱很好地保护。但是，它的阈值电压（Vth）与双沟槽器件相比下降更明显，并且倾斜沟道比垂直沟道受到更严重的应力。正电荷更容易注入倾斜沟道。通过实验和工艺计算机辅助设计（TCAD）模拟，分析和证明了这种现象和相应的机制。
The variations in the degradation of electrical characteristics resulting from different device structures for trench-gate SiC metal-oxide-semiconductor field effect transistors (MOSFETs) are investigated in this work. Two types of the most advanced commercial trench products, which are the asymmetric trench SiC MOSFET and the double-trench SiC MOSFET, are chosen as the targeted devices. The discrepant degradation trends caused by the repetitive avalanche stress are monitored. For the double-trench device, the conduction characteristic improves while the gate-drain capacitance (Cgd) increases seriously. It is because positive charges are injected into the bottom gate oxide during the avalanche process, which are driven by the high oxide electronic field (Eox) and the high impact ionization rate (I.I.) there. Meanwhile, for the asymmetric trench SiC MOSFET, the I–V curve under the high gate bias condition and the Cgd remain relatively stable, while the trench bottom is well protected by the deep P+ well. However, it’s threshold voltage (Vth) decreases more obviously when compared with that of the double-trench device and the inclined channel suffers from more serious stress than the vertical channel. Positive charges are more easily injected into the inclined channel. The phenomena and the corresponding mechanisms are analyzed and proved by experiments and technology computer-aided design (TCAD) simulations.
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影响因子：
6.7
作者：
Deng, Xiaochuan;Li, Xu;Zhang, Bo
通讯作者：
Zhang, Bo
雪崩条件下非对称双沟槽 SiC MOSFET 的研究和失效模式
影响因子：
6.7
作者：
Deng, Xiaochuan;Zhu, Hao;Zhang, Bo
通讯作者：
Zhang, Bo
影响因子：
3.1
作者：
Wei, Jiaxing;Liu, Siyang;Sun, Weifeng
通讯作者：
Sun, Weifeng
DOI：
10.1109/jestpe.2020.3028094
发表时间：
2021-10-01
影响因子：
5.5
作者：
Zhu, Zhengyun;Xu, Hongyi;Sheng, Kuang
通讯作者：
Sheng, Kuang
影响因子：
1.6
作者：
Boige, F.;Richardeau, F.
通讯作者：
Richardeau, F.