Interface roughness of plasma deposited polymer layers.

Interface roughness of plasma deposited polymer layers.
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等离子体沉积聚合物层的界面粗糙度

DOI:
10.1016/j.jcis.2010.07.051
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发表时间:
2010
影响因子:
9.9
通讯作者:
Berger
Berger
中科院分区:
化学1区
文献类型:
--
作者:
Arfsten;Förch;Berger

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研究了六甲基二硅氧烷等离子体聚合制备的相邻薄膜的界面粗糙度。多层结构是通过使用不同的等离子体条件在改变,导致不同的机械性能内的每一层。在多层结构的断裂件的正面上的扫描力显微镜揭示了层之间的显着的相位差。使用层之间的机械对比直接可视化界面可以估计界面粗糙度。我们发现,在射频(RF)输入功率为90 W,在氧气存在下沉积的六甲基二硅氧烷薄膜之间的界面上的薄膜由48 W无氧导致的界面粗糙度为10 nm。在相反的情况下,一个显着较低的界面粗糙度为1.3nm的确定。我们将界面粗糙度的增加与表面粗糙度<1nm相比归因于后续沉积工艺对膜的部分蚀刻。在较高的界面粗糙度的外观起着关键作用的RF输入功率,确定层中的交联密度和烃含量。
The interface roughness of adjacent films which were made by plasma polymerization of hexamethyldisiloxane were investigated. Multilayered structures were made by using different plasma conditions in alteration resulting in different mechanical properties within each layer. Scanning force microscopy on the face side of fractured pieces of the multilayer structures revealed a significant phase contrast between the layers. The direct visualization of the interface using the mechanical contrast between layers allowed the estimation of the interfacial roughness. We found that the interfaces between hexamethyldisiloxane films deposited at a radio frequency (RF) input power of 90W in the presence of oxygen on top of films made by 48W without oxygen resulted in an interface roughness of ≈10nm. In the reverse case, a significantly lower interface roughness of ≈3nm was determined. We attribute the increase of the interfacial roughness compared to the surface roughness being <1nm to partial etching of the films by the subsequent deposition process. A key role in the appearance of higher interface roughness plays the RF-input power that determines the cross linking density and the hydrocarbon content in layers.
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