Study on the band alignment of GaN/CH3NH3PbBr3 heterojunction by x-ray photoelectron spectroscopy
Study on the band alignment of GaN/CH3NH3PbBr3 heterojunction by x-ray photoelectron spectroscopy
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X射线光电子能谱研究GaN/CH3NH3PbBr3异质结能带排列
DOI：
10.1063/1.4997229
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发表时间：
2017-09
影响因子：
4
通讯作者：
Wang Li
中科院分区：
文献类型：
--
作者：
Gong Jinhui;Liu Shitao;He Yu;an;Feng Xingcan;Xia Xuefeng;Quan Zhijue;Wang Li
采用等离子体增强原子层沉积法在CH3NH3PbBr3单晶上沉积GaN薄层，制备了GaN/CH3NH3PbBr3异质结。用x射线光电子能谱研究了GaN/CH3NH3PbBr3异质结的能带排列。价带偏移（VBO）直接测定为0.13±0.08 eV。由VBO和带隙推导出导带偏置为1.39±0.12 eV。因此，确定GaN/CH3NH3PbBr3异质结的能带排列为i型。这些结果表明，氮化镓是一种很有前途的卤化物钙钛矿基发光器件载流子约束材料。
A GaN/CH3NH3PbBr3 heterojunction was fabricated by depositing a GaN thin layer on a CH3NH3PbBr3 single crystal by plasma enhanced atomic layer deposition. The band alignment of the GaN/CH3NH3PbBr3 heterojunction was studied by x-ray photoelectron spectroscopy. The valance band offset (VBO) is directly determined to be 0.13 ± 0.08 eV. The conduction band offset is deduced from the VBO and the band gaps, which turned out to be 1.39 ± 0.12 eV. Thus, the band alignment of the GaN/CH3NH3PbBr3 heterojunction is determined to be type-I. These results show that GaN is a promising material for carrier confinement in halide perovskite based light emitting devices.
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影响因子：
1.5
作者：
S. Nakamura;Masayuki Senoh Masayuki Senoh-Masayuki-Senoh;Takashi Mukai Takashi Mukai-Takashi-Mukai
通讯作者：
S. Nakamura;Masayuki Senoh Masayuki Senoh-Masayuki-Senoh;Takashi Mukai Takashi Mukai-Takashi-Mukai
影响因子：
17.1
作者：
Xing, Jun;Yan, Fei;Xiong, Qihua
通讯作者：
Xiong, Qihua
影响因子：
10.8
作者：
Li, Yat;Xiang, Jie;Lieber, Charles M.
通讯作者：
Lieber, Charles M.
X射线光电子能谱测量MgO/4H-SiC异质结的价带偏移
影响因子：
4
作者：
Sun, G. S.;Liu, X. L.;Yang, S. Y.;Wang, Z. G.;Wei, H. Y.;Zhang, B. L.;Zhang, P. F.;Zhu, Q. S.;Cai, F. F.;Fan, H. B.
通讯作者：
Fan, H. B.
影响因子：
3.2
作者：
M. Perego;G. Seguini
通讯作者：
M. Perego;G. Seguini