Quasi-Vertical GaN Schottky Barrier Diode on Silicon Substrate With 1010 High On/Off Current Ratio and Low Specific On-Resistance
Quasi-Vertical GaN Schottky Barrier Diode on Silicon Substrate With 1010 High On/Off Current Ratio and Low Specific On-Resistance
复制标题
硅衬底上准垂直 GaN 肖特基势垒二极管，具有 1010 高开/关电流比和低比导通电阻
DOI：
10.1109/led.2020.2968392
复制
发表时间：
2020-01
影响因子：
4.9
通讯作者：
Bo Shen
中科院分区：
文献类型：
--
作者：
Yue Li;Maojun Wang;Ruiyuan Yin;Jie Zhang;Ming Tao;Bing Xie;Yilong Hao;Xuelin Yang;Cheng P. Wen;Bo Shen
In this letter, we report a quasi-vertical GaN Schottky barrier diode (SBD) fabricated on a hetero-epitaxial layer on silicon with low dislocation density and high carrier mobility. The reduction of dislocation is realized by inserting a thin layer with high density of Ga vacancies to promote the dislocation bending. The dislocation density is <inline-formula> <tex-math notation="LaTeX">${1.6}\times {10}^{{8}}$ </tex-math></inline-formula> cm<sup>−2</sup> with a GaN drift layer thickness of <inline-formula> <tex-math notation="LaTeX">$4.5~\mu \text{m}$ </tex-math></inline-formula>. The fabricated prototype GaN SBD delivers a high on/off current ratio of <inline-formula> <tex-math notation="LaTeX">$10^{{10}}$ </tex-math></inline-formula>, a high forward current density of 1.6 kA/cm<sup>2</sup>@3 V, a low specific on-resistance of 1.1 <inline-formula> <tex-math notation="LaTeX">$\text{m}\Omega \cdot \text {cm}^{{2}}$ </tex-math></inline-formula>, and a low ideality factor of 1.23.
In this letter, we report a quasi-vertical GaN Schottky barrier diode (SBD) fabricated on a hetero-epitaxial layer on silicon with low dislocation density and high carrier mobility. The reduction of dislocation is realized by inserting a thin layer with high density of Ga vacancies to promote the dislocation bending. The dislocation density is <inline-formula> <tex-math notation="LaTeX">${1.6}\times {10}^{{8}}$ </tex-math></inline-formula> cm<sup>−2</sup> with a GaN drift layer thickness of <inline-formula> <tex-math notation="LaTeX">$4.5~\mu \text{m}$ </tex-math></inline-formula>. The fabricated prototype GaN SBD delivers a high on/off current ratio of <inline-formula> <tex-math notation="LaTeX">$10^{{10}}$ </tex-math></inline-formula>, a high forward current density of 1.6 kA/cm<sup>2</sup>@3 V, a low specific on-resistance of 1.1 <inline-formula> <tex-math notation="LaTeX">$\text{m}\Omega \cdot \text {cm}^{{2}}$ </tex-math></inline-formula>, and a low ideality factor of 1.23.
登录
查看更多内容
影响因子：
4.9
作者：
Suguru Mase;T. Hamada;J. Freedsman;T. Egawa
通讯作者：
Suguru Mase;T. Hamada;J. Freedsman;T. Egawa
DOI：
10.1109/icicdt.2019.8790866
发表时间：
2019-06
期刊：
2019 International Conference on IC Design and Technology (ICICDT)
影响因子：
--
作者：
Yue Li;R. Yin;M. Tao;Y. Hao;C. Wen;Maojun Wang;Jie Zhang;Xuelin Yang;B. Shen
通讯作者：
Yue Li;R. Yin;M. Tao;Y. Hao;C. Wen;Maojun Wang;Jie Zhang;Xuelin Yang;B. Shen
影响因子：
5.3
作者：
Xiaohua Niu;T. Luo;Jianfeng Lu;Y. Xiang
通讯作者：
Xiaohua Niu;T. Luo;Jianfeng Lu;Y. Xiang
影响因子：
4.9
作者：
Yuhao Zhang;M. Yuan;N. Chowdhury;K. Cheng;T. Palacios
通讯作者：
Yuhao Zhang;M. Yuan;N. Chowdhury;K. Cheng;T. Palacios
影响因子：
3.2
作者：
Mita, S.;Collazo, R.;Sitar, Z.
通讯作者：
Sitar, Z.