Comparison of Neutron Detection Performance of Four Thin-Film Semiconductor Neutron Detectors Based on Geant4.
Comparison of Neutron Detection Performance of Four Thin-Film Semiconductor Neutron Detectors Based on Geant4.
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DOI：
10.3390/s21237930
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发表时间：
2021-11-27
期刊：
影响因子：
--
通讯作者：
Aspinall MD
中科院分区：
文献类型：
--
作者：
Zhang Z;Aspinall MD
第三代半导体材料具有带隙宽、导热系数高、化学稳定性高、抗辐射性强等特点。这些材料在光电子、高温大功率设备、辐射探测器等方面具有广阔的应用前景。本文研究了由四种第三代半导体材料制成的薄膜固态中子探测器。使用Geant4 10.7对检测器进行分析和优化。研究了四种材料实现最高检测效率所需的最佳厚度。优化后的材料包括金刚石、碳化硅（SiC）、氧化镓（GaO）和氮化镓（GaN），转炉层材料为天然富集硼和锂的碳化硼（BC）和氟化锂（liff）。在最佳厚度条件下，研究了主碰撞原子能谱（PKA）和每原子位移（DPA），以表征四种材料的辐射硬度。研究了这些材料的伽马抑制能力和电子收集效率（ECE）。这项工作将有助于制造耐辐射、耐高温和快速响应的中子探测器。它将促进反应堆监测、高能物理实验和核聚变研究。
Third-generation semiconductor materials have a wide band gap, high thermal conductivity, high chemical stability and strong radiation resistance. These materials have broad application prospects in optoelectronics, high-temperature and high-power equipment and radiation detectors. In this work, thin-film solid state neutron detectors made of four third-generation semiconductor materials are studied. Geant4 10.7 was used to analyze and optimize detectors. The optimal thicknesses required to achieve the highest detection efficiency for the four materials are studied. The optimized materials include diamond, silicon carbide (SiC), gallium oxide (GaO) and gallium nitride (GaN), and the converter layer materials are boron carbide (BC) and lithium fluoride (LiF) with a natural enrichment of boron and lithium. With optimal thickness, the primary knock-on atom (PKA) energy spectrum and displacements per atom (DPA) are studied to provide an indication of the radiation hardness of the four materials. The gamma rejection capabilities and electron collection efficiency (ECE) of these materials have also been studied. This work will contribute to manufacturing radiation-resistant, high-temperature-resistant and fast response neutron detectors. It will facilitate reactor monitoring, high-energy physics experiments and nuclear fusion research.
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