Polarization and p-type doping effects on photoresponse of separate absorption and multiplication AlGaN solar-blind avalanche photodiodes
Polarization and p-type doping effects on photoresponse of separate absorption and multiplication AlGaN solar-blind avalanche photodiodes
复制标题
偏振和p型掺杂对分离吸收和倍增AlGaN日盲雪崩光电二极管光响应的影响
DOI：
10.1007/s11082-018-1385-4
复制
发表时间：
2018-02
影响因子：
3
通讯作者：
Luo X D
中科院分区：
文献类型：
--
作者：
Yu C H;Ge Z F;Chen X Y;Li L;Luo X D
详细研究了分离吸收倍增（SAM） AlGaN太阳盲雪崩光电二极管（APDs）的光响应特性。采用新设计的AlGaN雪崩光电二极管模型对p-i-n-i-n雪崩光电二极管进行了检测。研究结果表明：近零偏置下，暗电流密度约为3.51 × 10−8A/cm2，光电流密度为5.86 × 10−5A/cm2，反向偏置下，雪崩击穿发生在135.0 V左右，与实验数据一致。为了研究影响apd光响应特性的因素，模拟了不同偏置下apd的光响应光谱。该APD具有260 ~ 280 nm波长范围内的窗口区，在短波长侧具有较高的抑制比。同时，极化电荷对APD响应率的依赖性表明，负极化电荷对APD响应率有强烈影响。在Al0.4Ga0.6N/Al0.6Ga0.4N界面上增加负极化电荷显著降低了响应率，而在GaN/Al0.4Ga0.6N界面上增加相同极性的电荷则提高了响应率。此外，通过对比负极化电荷对apd导带的影响，分析了响应度对p型掺杂的依赖关系。最后，利用反演层模型解释了这些因素对APD响应性的影响。该研究有助于探索SAM AlGaN结构中的极化和p型掺杂效应，以及实现高响应度的太阳盲apd。
The photoresponse characteristics of separate absorption and multiplication (SAM) AlGaN solar-blind avalanche photodiodes (APDs) were investigated in detail. The p-i-n-i-n avalanche photodiodes were examined using the newly designed model of avalanche photodiodes in AlGaN. The research results showed that the dark current density was about 3.51 × 10−8A/cm2, the light current density was 5.86 × 10−5A/cm2under near-zero bias, and the avalanche breakdown occurred at about 135.0 V under reverse bias, which were all consistent with the experimental data. To investigate the effects influencing the photoresponse characteristics of the APDs, their photo responsivity spectra under different biases were simulated. The APD featured a window region over the wavelength range from 260 to 280 nm with a high rejection ratio on the short-wavelength side. Meanwhile, the dependence of APD responsivity on the polarization charge revealed that the negative polarization charges strongly affected the responsivity. Increased negative polarization charges at the Al0.4Ga0.6N/Al0.6Ga0.4N interface markedly lowered the responsivity, whereas charges of the same polarity at the GaN/Al0.4Ga0.6N interface enhanced the responsivity. Furthermore, the dependence of responsivity on p-type doping was analyzed by comparison with the effects of negative polarization charges on the conduction band of the APDs. Finally, the inversion layer models are used to interpret the effects of these on the APD responsivity. This research is useful for exploring polarization and p-type doping effects in SAM AlGaN structures and realization of high responsivity solar-blind APDs.
登录
查看更多内容
影响因子：
4
作者：
V. Polyakov;V. Cimalla;V. Lebedev;K. Köhler;S. Müller;P. Waltereit;O. Ambacher
通讯作者：
V. Polyakov;V. Cimalla;V. Lebedev;K. Köhler;S. Müller;P. Waltereit;O. Ambacher
影响因子：
4
作者：
E. Cicek;Z. Vashaei;R. Mcclintock;C. Bayram;M. Razeghi
通讯作者：
E. Cicek;Z. Vashaei;R. Mcclintock;C. Bayram;M. Razeghi
影响因子：
4
作者：
Pau, J. L.;Bayram, C.;Silversmith, D.
通讯作者：
Silversmith, D.
DOI：
10.1002/9783527610723
发表时间：
2007-01
期刊：
--
影响因子：
--
作者：
J. Piprek
通讯作者：
J. Piprek
影响因子：
3
作者：
Xiaodong Wang;Xiaoyao Chen;Liwei Hou;B. Wang;Wei Xie;M. Pan
通讯作者：
Xiaodong Wang;Xiaoyao Chen;Liwei Hou;B. Wang;Wei Xie;M. Pan