Origin of p-type conduction in Cu-doped ZnO nano-films synthesized by hydrothermal method combined with post-annealing
Origin of p-type conduction in Cu-doped ZnO nano-films synthesized by hydrothermal method combined with post-annealing
复制标题
水热法结合后退火合成Cu掺杂ZnO纳米薄膜p型导电的起源
DOI：
10.1016/j.materresbull.2015.04.040
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发表时间：
2015-10
影响因子：
5.4
通讯作者：
Zhizhen Ye
中科院分区：
文献类型：
--
作者：
Haiping He;Qiaqi Lu;Tao Jin;Zhizhen Ye
采用水热法结合后退火工艺制备了Cu掺杂ZnO纳米薄膜。纳米薄膜的形成机制可以解释由铜吸附面选择性晶体生长抑制机制。2at.% Cu掺杂样品表现出p型导电性，这可以通过具有良好整流特性的p-n同质结来验证。通过XPS和PL分析研究了Cu掺杂样品p型导电的起源。CuZn+1受主离子的电离能为326 meV，这可能是产生p型导电性的主要原因。
Cu-doped ZnO nano-films were synthesized by a hydrothermal method combined with post-annealing process. The mechanism for the formation of the nano-films can be explained by a Cu-adsorbed face-selective crystal growth inhibition mechanism. The 2 at.% Cu-doped sample behaved p-type conductivity, which can be verified by a p–n homojunction with well-defined rectifying characteristic. The origin of p-type conduction of the Cu-doped sample was studied by XPS and PL analyses. The CuZn+1acceptor with the ionization energy of 326 meV should be the main reason for the p-type conductivity.
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