Silicon deposition in nanopores using a liquid precursor.
Silicon deposition in nanopores using a liquid precursor.
复制标题
DOI：
10.1038/srep37689
复制
发表时间：
2016-11-22
影响因子：
4.6
通讯作者：
Shimoda T
中科院分区：
文献类型：
--
作者：
Masuda T;Tatsuda N;Yano K;Shimoda T
将硅沉积到纳米级空间的技术对于半导体行业下一代器件的进一步缩小至关重要。在这项研究中，我们利用基于汽化环戊硅烷（CPS）的范德华能的热力学行为，将硅填充到直径为3.5 nm的纳米孔中，宽高比为70。我们最初将CPS合成为半导体硅的液体前驱体。由于蒸发后的CPS可以自发地填充纳米孔，因此我们在常压下使用CPS作为热化学气相沉积的气源。我们基于Lifshitz van der Waals理论对CPS自由能的估计澄清了填充机制，其中纳米孔中的CPS蒸汽容易发生毛细凝结，因为它的摩尔体积比其他蒸汽（如水、甲苯、硅烷和二硅烷）大。因此，在沉积过程中观察到液体特异性特征；具体来说，凝聚的CPS通过毛细力自发地渗透到纳米孔中。填充纳米孔的CPS在400℃下通过热分解转化为固体硅。该方法有望用作纳米级硅填充技术，这对未来量子级硅器件的制造至关重要。
Techniques for depositing silicon into nanosized spaces are vital for the further scaling down of next-generation devices in the semiconductor industry. In this study, we filled silicon into 3.5-nm-diameter nanopores with an aspect ratio of 70 by exploiting thermodynamic behaviour based on the van der Waals energy of vaporized cyclopentasilane (CPS). We originally synthesized CPS as a liquid precursor for semiconducting silicon. Here we used CPS as a gas source in thermal chemical vapour deposition under atmospheric pressure because vaporized CPS can fill nanopores spontaneously. Our estimation of the free energy of CPS based on Lifshitz van der Waals theory clarified the filling mechanism, where CPS vapour in the nanopores readily undergoes capillary condensation because of its large molar volume compared to those of other vapours such as water, toluene, silane, and disilane. Consequently, a liquid-specific feature was observed during the deposition process; specifically, condensed CPS penetrated into the nanopores spontaneously via capillary force. The CPS that filled the nanopores was then transformed into solid silicon by thermal decomposition at 400 °C. The developed method is expected to be used as a nanoscale silicon filling technology, which is critical for the fabrication of future quantum scale silicon devices.
登录
查看更多内容
影响因子：
2.3
作者：
Roule, A.;Amuntencei, M.;Passemard, G.
通讯作者：
Passemard, G.
影响因子：
1.3
作者：
Topol, A. W.;La Tulipe, D. C., Jr.;Ieong, M.
通讯作者：
Ieong, M.
影响因子：
64.8
作者：
Shimoda, T;Matsuki, Y;Takeuchi, Y
通讯作者：
Takeuchi, Y
影响因子：
9.9
作者：
DERJAGUIN, BV;CHURAEV, NV
通讯作者：
CHURAEV, NV
影响因子：
4.4
作者：
FORCADA, ML
通讯作者：
FORCADA, ML