Wetting process of electrolyte in high density Cu/Sn micro-bumps electrodepositing
Wetting process of electrolyte in high density Cu/Sn micro-bumps electrodepositing
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高密度Cu/Sn微凸块电沉积电解液润湿过程
DOI：
10.1016/j.apsusc.2010.11.121
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发表时间：
2011-02
影响因子：
6.7
通讯作者：
Ling, Huiqin
中科院分区：
文献类型：
--
作者：
Hu, Anmin;Li, Ming;Hang, Tao;Bi, Jinglin;Ling, Huiqin
研究了高密度Cu/Sn微凸点电沉积中电解液的润湿过程。采用等离子体处理、在电解液中添加润湿剂和机械作用3种方法使电解液渗透到高深宽比的光刻微孔中。根据接触角和表面张力的测定，前两种方法改善了样品与电解质的润湿性。然而，电解液仍然不能到达微孔的底部。然后，电解液受到机械作用，包括搅拌和超声振动。在机械作用下，通过光刻形成深度为60μm、半径为30μm的微孔，实现了无空洞Cu/Sn微凸点的制备。最后，提出了一个反映光刻微孔中电解液润湿过程的模型。
Wetting process of electrolyte in high density Cu/Sn micro-bumps electrodepositing is reported in this paper. Three methods were adopted to enable electrolyte to permeate photo-etching micro-holes with high aspect ratio, including plasma treatment, adding wetting additive in electrolyte and mechanical action. Wettability of the samples with electrolyte was improved by the first two methods, according to contact angle and surface tension measurement. However, electrolyte still cannot reach up to the bottom of micro-hole. And then, electrolyte was subjected to mechanical action, including agitation and ultrasonic vibration. Under mechanical action, void free Cu/Sn micro-bumps fabrication was achieved in photo-etching micro-holes with depth of 60μm and radius of 30μm. At last, we proposed a model to show wetting process of electrolyte in photo-etching micro-holes.
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影响因子：
3.9
作者：
G. W. Gale;D. Rath;E. I. Cooper;Scott A. Estes;H. Okorn-Schmidt;Jeffrey A. Brigante;R. Jagannathan;G. Settembre;Eddie Adams
通讯作者：
G. W. Gale;D. Rath;E. I. Cooper;Scott A. Estes;H. Okorn-Schmidt;Jeffrey A. Brigante;R. Jagannathan;G. Settembre;Eddie Adams
影响因子：
2.4
作者：
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通讯作者：
ROY, RA
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0.5
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通讯作者：
N. Vourdas;M. Vlachopoulou;A. Tserepi;E. Gogolides
影响因子：
6.7
作者：
Arpagaus, C;Rossi, A;von Rohr, PR
通讯作者：
von Rohr, PR
影响因子：
1.6
作者：
Ko, Cheng-Ta;Chen, Kuan-Neng
通讯作者：
Chen, Kuan-Neng