Localized and Programmable Chemical Vapor Deposition Using an Electrically Charged and Guided Molecular Flux.
Localized and Programmable Chemical Vapor Deposition Using an Electrically Charged and Guided Molecular Flux.
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使用带电和引导分子通量的局部可编程化学气相沉积
DOI:
10.1021/acsnano.0c03726
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发表时间:
2020
期刊:
影响因子:
17.1
通讯作者:
Jacobs
中科院分区:
文献类型:
--
作者:
Reiprich;Schlag;Hopfeld;Stauden;Pezoldt;Jacobs
Chemical vapor deposition is a widely used material deposition technique. It commonly provides a uniform material flux to the substrate to cause uniform thin film growth. However, the ability to precisely adjust the local deposition rate would be highly preferable. This communication reports on a chemical vapor deposition method performed in a localized and programmable fashion by introducing an electrically charged and guided molecular flux. This allows for local adjustments of the deposition rate and three-dimensional shape by controlling the electric fields. Specifically, the precursor molecules are charged and then guided by arrays of electrodynamic funnels, which are created by a patterned dielectric layer, to predetermined deposition locations with a minimal spot size of 250 nm. Furthermore, nearest neighbor coupling is reported as a shaping method to cause the deposition of three-dimensional nanostructures. Additionally, the integration of individually addressable domain electrodes offers programmable charge dissipation to achieve an ON/OFF control. The described method is applicable to a wide variety of materials and precursors. Here, the localized and programmable deposition of three-dimensional copper oxide, chromium oxide, zinc oxide, and carbon nanowires is demonstrated.
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影响因子:
3.8
作者:
Johannes Reiprich;N. Isaac;Leslie Schlag;M. Hopfeld;G. Ecke;T. Stauden;J. Pezoldt;H. Jacobs
通讯作者:
Johannes Reiprich;N. Isaac;Leslie Schlag;M. Hopfeld;G. Ecke;T. Stauden;J. Pezoldt;H. Jacobs
DOI:
--
发表时间:
2004
期刊:
影响因子:
--
作者:
C. Fauteux;J. Pegna
通讯作者:
J. Pegna
DOI:
--
发表时间:
1993
期刊:
影响因子:
--
作者:
P. Desjardins;R. Izquierdo;M. Meunier
通讯作者:
M. Meunier
DOI:
--
发表时间:
1985
期刊:
影响因子:
--
作者:
P. Richard;R. Markunas;G. Lucovsky;G. Fountain;A. Mansour;D. Tsu
通讯作者:
D. Tsu
影响因子:
9.5
作者:
Schlag;Reiprich;Katzer;Nahrstedt;Pezoldt;Stauden;Jacobs
通讯作者:
Jacobs