High-Temperature Molecular Beam Epitaxy of Hexagonal Boron Nitride with High Active Nitrogen Fluxes.
High-Temperature Molecular Beam Epitaxy of Hexagonal Boron Nitride with High Active Nitrogen Fluxes.
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DOI：
10.3390/ma11071119
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发表时间：
2018-06-30
期刊：
影响因子：
--
通讯作者：
Novikov SV
中科院分区：
文献类型：
--
作者：
Cheng TS;Summerfield A;Mellor CJ;Khlobystov AN;Eaves L;Foxon CT;Beton PH;Novikov SV
六方氮化硼（hBN）作为范德华（vdW）异质结构的关键成分以及作为深紫外器件的宽带隙材料引起了广泛的关注。我们最近展示了在约 1400 °C 的高衬底温度下，在高度定向热解石墨衬底上进行六方氮化硼层的等离子体辅助分子束外延 (PA-MBE)。本文将介绍使用高效射频 (RF) 氮等离子体源进行六方氮化硼层的高温 PA-MBE 生长的数据。尽管这种新源的氮通量增加了三倍多，但我们看到六方氮化硼层的生长速率没有显着增加，这表明六方氮化硼层的生长速率是由硼到达速率控制的。随着生长温度降低至 1080 °C，六方氮化硼的厚度增加至 90 nm。然而，MBE温度的降低导致hBN的光学性能恶化。光学吸收数据表明，PA-MBE 过程中活性氮通量的增加改善了六方氮化硼的光学性能，并抑制了 5.0-5.5 eV 能量范围内与缺陷相关的光学吸收。
Hexagonal boron nitride (hBN) has attracted a great deal of attention as a key component in van der Waals (vdW) heterostructures, and as a wide band gap material for deep-ultraviolet devices. We have recently demonstrated plasma-assisted molecular beam epitaxy (PA-MBE) of hBN layers on substrates of highly oriented pyrolytic graphite at high substrate temperatures of ~1400 °C. The current paper will present data on the high-temperature PA-MBE growth of hBN layers using a high-efficiency radio-frequency (RF) nitrogen plasma source. Despite more than a three-fold increase in nitrogen flux with this new source, we saw no significant increase in the growth rates of the hBN layers, indicating that the growth rate of hBN layers is controlled by the boron arrival rate. The hBN thickness increases to 90 nm with decrease in the growth temperature to 1080 °C. However, the decrease in the MBE temperature led to a deterioration in the optical properties of the hBN. The optical absorption data indicates that an increase in the active nitrogen flux during the PA-MBE process improves the optical properties of hBN and suppresses defect related optical absorption in the energy range 5.0–5.5 eV.
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影响因子：
3.2
作者：
Heying, B;Averbeck, R;Speck, JS
通讯作者：
Speck, JS
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1.4
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影响因子：
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作者：
Cho YJ;Summerfield A;Davies A;Cheng TS;Smith EF;Mellor CJ;Khlobystov AN;Foxon CT;Eaves L;Beton PH;Novikov SV
通讯作者：
Novikov SV
影响因子：
3.2
作者：
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影响因子：
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