Damping in magnetization dynamics of single-crystal Fe3O4/GaN thin films

Damping in magnetization dynamics of single-crystal Fe3O4/GaN thin films
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单晶 Fe3O4/GaN 薄膜磁化动力学的阻尼

DOI:
10.1063/1.3563058
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发表时间:
2011-04
影响因子:
3.2
通讯作者:
--
中科院分区:
物理与天体物理3区
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--
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利用场泵浦时间分辨磁光克尔(TRMOKE)装置研究了生长在GaN(100)上的Fe3O4外延薄膜的时间分辨磁化动力学。测量了Fe3O4/GaN薄膜在1 kOe磁场脉冲下的动态磁化响应,并与大自旋Landau - Lifshitz - Gilbert (LLG)模拟进行了比较。通过在两个正交方向施加不同的偏置场,估计了两种系统的各向异性常数,并提取了阻尼常数。这项工作提供了单晶Fe3O4/GaN系统中阻尼的厚度和频率依赖性的第一个TRMOKE研究。
The time-resolved magnetization dynamics of epitaxial Fe3O4 thin films grown on GaN(100) was studied using a field pumped time-resolved magneto-optical Kerr (TRMOKE) setup. The dynamic responses of the magnetization in the 3 and 6 nm Fe3O4/GaN films under a 1 kOe magnetic field pulse were measured and compared to a macrospin Landau−Lifshitz−Gilbert (LLG) simulation. The anisotropy constants of the two systems have been estimated and the damping constant has been extracted by applying different bias field along two orthogonal directions. This work provides a first TRMOKE study of thickness and frequency dependence of damping in single crystal Fe3O4/GaN systems.
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