Efficient sensitized photoluminescence of Er silicate in silicon oxide films embedded with amorphous silicon clusters, part II: photoluminescence

Efficient sensitized photoluminescence of Er silicate in silicon oxide films embedded with amorphous silicon clusters, part II: photoluminescence
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嵌入非晶硅团簇的氧化硅薄膜中硅酸铒的高效敏化光致发光,第二部分:光致发光

DOI:
10.1364/ome.9.004339
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发表时间:
2019-11
影响因子:
2.8
通讯作者:
Deren Yang
Deren Yang
中科院分区:
材料科学3区
文献类型:
--
作者:
Yuhan Gao;Hao Shen;Dongsheng Li;Deren Yang

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本文报道了掺铒硅酸盐薄膜中铒硅酸盐的敏化光致发光。采用两步退火工艺,其中第一步确定a-Si嵌入结构的分布和尺寸,第二步修改Er硅酸盐的晶体质量和相组成以及敏化剂的浓度。在确定每一步的退火温度和退火时间时,需要综合考虑这些因素。在1000 °C退火30 min后再1100 °C退火30 min的薄膜中,获得了由中性氧空位(NOV)或非桥氧空穴中心(NBOHC)等发光中心敏化的Er硅酸盐发光的优化结果。
We report on the sensitized photoluminescence (PL) of Er silicates in a-Si-embedded Er silicate films. A two-step annealing process is utilized, where the first step determines the distribution and the sizes of the a-Si embedded structure and the second step modifies the crystal quality and the phase composition of Er silicates as well as the concentration of sensitizers. The determination of the annealing temperatures and the annealing time for each step requires an overall consideration of these factors. Optimized PL from Er silicates sensitized by luminescent centers (LCs) such as neutral oxygen vacancy (NOV) or non-bridging oxygen hole center (NBOHC) have been achieved in the film annealed at 1000 °C for 30 min followed by 1100 °C for 30 min, which is composed of well-crystallized y-Er2Si2O7 embedded with a-Si clusters.
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