Toward Fabrication of Devices Based on Graphene/Oxide Multilayers.
Toward Fabrication of Devices Based on Graphene/Oxide Multilayers.
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DOI：
10.1021/acsaelm.3c00341
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发表时间：
2023-06-27
影响因子：
4.7
通讯作者：
Petrov, Peter K.
中科院分区：
文献类型：
--
作者：
Wang, Yuxuan;Guerenneur, Anais;Ramadan, Sami;Huang, Jingle;Fearn, Sarah;Nabi, Nomaan;Klein, Norbert;Alford, Neil McN.;Petrov, Peter K.
由于其高导电性、低密度和柔韧性，石墨烯在从纳米电子学到生物传感和高频器件的广泛应用中具有巨大的潜力。对于许多器件应用，需要在高温和环境氧条件下将介电材料沉积在石墨烯上。这已被证明是极具挑战性的，因为这些条件会导致石墨烯的严重降解。在这项工作中，我们研究了石墨烯在氧气环境中高温下的降解，以及可能的保护机制，以使氧化薄膜在石墨烯上在高温下生长。我们发现，在高温沉积之前，用自组装单层的六甲基二氮杂烷（HMDS）涂层石墨烯可以显著减少引起的损伤。此外，经过HMDS处理的石墨烯样品由于与氧的弱相互作用而表现出比裸石墨烯更弱的掺杂效应，并且在退火过程中表现出更慢的电阻降解速率。因此，这是一种很有前途的方法，可以在高温下在石墨烯上沉积金属氧化物材料，而不会显著降低石墨烯的质量，这对广泛的应用至关重要。
Owing to its high electrical conductivity, low density, and flexibility, graphene has great potential for use as a building block in a wide range of applications from nanoelectronics to biosensing and high-frequency devices. For many device applications, it is required to deposit dielectric materials on graphene at high temperatures and in ambient oxygen. This has been proven to be highly challenging because these conditions cause significant degradation in graphene. In this work, we investigate the degradation of graphene at elevated temperatures in an oxygen atmosphere and possible protection mechanisms to enable the growth of oxide thin films on graphene at higher temperatures. We show that coating graphene with self-assembled monolayers of hexamethyldisilazane (HMDS) prior to a high-temperature deposition can significantly reduce the damage induced. Furthermore, a graphene sample treated with HMDS displayed a weaker doping effect due to weak interaction with oxygen species than bare graphene, and a much slower rate of electrical resistance degradation was exhibited during annealing. Thus, it is a promising approach that could enable the deposition of metal oxide materials on graphene at high temperatures without significant degradation in graphene quality, which is critical for a wide range of applications.
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影响因子：
4.1
作者：
Ramadan S;Zhang Y;Tsang DKH;Shaforost O;Xu L;Bower R;Dunlop IE;Petrov PK;Klein N
通讯作者：
Klein N
影响因子：
38.3
作者：
Sarker, Biddut K.;Cazalas, Edward;Chen, Yong P.
通讯作者：
Chen, Yong P.
影响因子：
10.8
作者：
Eckmann, Axel;Felten, Alexandre;Casiraghi, Cinzia
通讯作者：
Casiraghi, Cinzia
DOI：
10.1073/pnas.0811754106
发表时间：
2009-05-05
影响因子：
11.1
作者：
Huang, Mingyuan;Yan, Hugen;Hone, James
通讯作者：
Hone, James
影响因子：
8.9
作者：
Xu L;Ramadan S;Akingbade OE;Zhang Y;Alodan S;Graham N;Zimmerman KA;Torres E;Heslegrave A;Petrov PK;Zetterberg H;Sharp DJ;Klein N;Li B
通讯作者：
Li B