Bifacial semi-transparent ultra-thin Cu(In,Ga)Se2 solar cells on ITO substrate: How ITO thickness and Na doping influence the performance
Bifacial semi-transparent ultra-thin Cu(In,Ga)Se2 solar cells on ITO substrate: How ITO thickness and Na doping influence the performance
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ITO 基板上的双面半透明超薄 Cu(In,Ga)Se2 太阳能电池：ITO 厚度和 Na 掺杂如何影响性能
DOI：
10.1016/j.solmat.2021.111431
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发表时间：
2022-01
影响因子：
6.9
通讯作者：
Martina Schmid
中科院分区：
文献类型：
--
作者：
Yong Li;Guanchao Yin;Martina Schmid
超薄Cu (In, Ga) Se 2 （CIGSe）具有低原料消耗和高转换效率的优点，是一种很有前途的薄膜太阳能电池吸收材料。此外，透明背触点上的超薄吸收器带来了半透明的优势，这对于串联或双面太阳能电池来说是必不可少的。这项工作优化了超薄CIGSe在In 2o3: Sn （ITO）上的应用，用于双面半透明超薄（BSTUT） CIGSe太阳能电池。首先，将100-400 nm的ITO涂覆在玻璃基板上，发现ITO的厚度会由于Burstein-Moss （BM）位移而影响其光学带隙E g。与100 nm厚度的ITO相比，400 nm的ITO带隙增加了0.14 eV，并且由于ITO/CIGSe界面处Schottky势垒Φ b的减小，相关的BSTUT CIGSe太阳能电池的voc提高了0.043 V。其次，将0-8 mg用于CIGSe沉积后处理（PDT）的NaF应用于BSTUT太阳能电池。与不含NaF的对照材料相比，8 mg NaF PDT使载流子密度从2× 10 15 cm−3提高到1.2× 10 16 cm−3，使ITO/CIGSe肖特基势垒Φ b降低了0.21 eV。综上所述，我们发现NaF PDT可以调节ITO上超薄CIGSe的载流子密度，较厚的ITO和较高的NaF PDT剂量都可以降低ITO/CIGSe的Schottky势垒。这些发现使BSTUT CIGSe太阳能电池的未来优化成为可能。
Abstract Ultra-thin Cu (In, Ga) Se 2 (CIGSe) is a promising absorber for thin-film solar cells, as it combines the advantages of low raw material consumption and high conversion efficiency. In addition, ultra-thin absorbers on transparent back contacts bring the advantage of semitransparency, which is essential for eg tandem or bifacial solar cells. This work optimizes ultra-thin CIGSe on In 2 O 3: Sn (ITO) for application in bifacial semi-transparent ultra-thin (BSTUT) CIGSe solar cells. Firstly, 100–400 nm ITO were coated onto glass substrates, and it was revealed that the thickness of ITO influences its optical bandgap E g due to the Burstein-Moss (BM) shift. The band gap of 400 nm ITO increased by 0.14 eV compared to the 100 nm thick ITO, and the V oc of the related BSTUT CIGSe solar cells raised by 0.043 V as a result of the diminished Schottky barrier Φ b at the ITO/CIGSe interface. Secondly, 0–8 mg of NaF used for post deposition treatment (PDT) of the CIGSe were applied to the BSTUT solar cells. Compared to the reference without NaF, 8 mg NaF PDT enhanced the carrier density N A from 2× 10 15 cm− 3 to 1.2× 10 16 cm− 3 and diminished the ITO/CIGSe Schottky barrier Φ b by 0.21 eV. In conclusion, we found that NaF PDT can tune the carrier density of ultra-thin CIGSe on ITO, and both thicker ITO and higher NaF PDT dose can reduce the ITO/CIGSe Schottky barrier. These discoveries enable future optimization of BSTUT CIGSe solar cells.
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影响因子：
6.9
作者：
Muhammad Saifullah;Kihwan Kim;Rauf Shahzad;J. Gwak;J. Cho;J. Yoo;J. Yun;Joo Hyung Park
通讯作者：
Muhammad Saifullah;Kihwan Kim;Rauf Shahzad;J. Gwak;J. Cho;J. Yoo;J. Yun;Joo Hyung Park
DOI：
10.1088/0022-3727/47/20/205301
发表时间：
2014-05
期刊：
Journal of Physics D: Applied Physics
影响因子：
--
作者：
P. Manley;G. Yin;M. Schmid
通讯作者：
P. Manley;G. Yin;M. Schmid
影响因子：
6.9
作者：
G. Yin;Varvara Brackmann;V. Hoffmann;M. Schmid
通讯作者：
G. Yin;Varvara Brackmann;V. Hoffmann;M. Schmid
影响因子：
9.5
作者：
Muhammad Saifullah;S. Rasool;SeJin Ahn;Kihwan Kim;J. Cho;J. Yoo;W. Shin;J. Yun;Joo Hyung Park
通讯作者：
Muhammad Saifullah;S. Rasool;SeJin Ahn;Kihwan Kim;J. Cho;J. Yoo;W. Shin;J. Yun;Joo Hyung Park
DOI：
10.1002/pssr.202100042
发表时间：
2021-05
期刊：
physica status solidi (RRL) – Rapid Research Letters
影响因子：
--
作者：
D. Abou‐Ras;Aleksandra Nikolaeva;M. Krause;L. Korte;H. Stange;R. Mainz;Ekin Simsek Sanli;P. V. van Aken;T. Sugaya;J. Nishinaga
通讯作者：
D. Abou‐Ras;Aleksandra Nikolaeva;M. Krause;L. Korte;H. Stange;R. Mainz;Ekin Simsek Sanli;P. V. van Aken;T. Sugaya;J. Nishinaga