High Performance InP-Based Polarization Beam Splitter With Reverse Bias and Injection Current
High Performance InP-Based Polarization Beam Splitter With Reverse Bias and Injection Current
复制标题
具有反向偏置和注入电流的高性能 InP 基偏振分束器
DOI：
10.1109/jlt.2019.2962632
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发表时间：
2020-04
影响因子：
4.7
通讯作者：
Guo Weihua
中科院分区：
文献类型：
--
作者：
Dai Xiangyang;Chen Quanan;Zhao Gongyuan;Liu Yuanyuan;Lu Qiaoyin;Donegan John E.;Guo Weihua
High performance InP-based polarization beam splitters (PBSs) with a symmetrical Mach-Zehnder interferometer (MZI) are theoretically and experimentally demonstrated. The p-i-n waveguide is exploited to employ the phase shifters in the two arms of the MZI. Injection current and reverse bias inducing electro-optic (EO) effects in each of the MZI arms are analysed in detail when the waveguides are aligned along both the [011] and [011] directions. Results indicate that the birefringence from reverse bias help to realize the PBS combining with the polarization-independent carrier-induced refractive index change from the injection current. Theoretical prediction shows that the polarization extinction ratio (PER) is over 35 dB at 1550 nm for the PBSs with the waveguides aligned along both directions. Furthermore, the PBSwith the waveguides aligned along the [011] direction can be adjusted more easily to work at the best operating point and get the higher birefringence which requires lower reverse bias exhibiting better performance across the C-band compared with the [011] direction. The fabricated PBSs exhibit a PER over 19 dB (14 dB) in thewavelength range from 1525 to 1570nmwith one arm injected of 2.88 mA (0.2 mA) current and the other arm reversed biased at 5.63 V (7.89 V) when the waveguides aligned along the [011] ([011]) direction. The PER of both PBSs is expected to be 20 dB across the C-band with the help of a birefringence contribution arising from inserting waveguide arms of different widths.
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影响因子：
4.7
作者：
L. M. Augustin;Jos J. G. M. van der Tol;R. Hanfoug;W. Laat;Michael J. E. van de Moosdijk;Paul W. L. van Dijk;Y. Oei;M. Smit
通讯作者：
L. M. Augustin;Jos J. G. M. van der Tol;R. Hanfoug;W. Laat;Michael J. E. van de Moosdijk;Paul W. L. van Dijk;Y. Oei;M. Smit
影响因子：
35
作者：
Shen, Bing;Wang, Peng;Menon, Rajesh
通讯作者：
Menon, Rajesh
高消光比硅偏振分束器，可耐受波导宽度和耦合长度变化
影响因子：
3.8
作者：
Zhang, Yong;He, Yu;Su, Yikai
通讯作者：
Su, Yikai
影响因子：
3.2
作者：
Sotoodeh, M;Khalid, AH;Rezazadeh, AA
通讯作者：
Rezazadeh, AA
影响因子：
2.6
作者：
Quanan Chen;Xiang Ma;Wei Sun;Ye Liu;Gonghai Liu;Gongyuan Zhao;Q. Lu;W. Guo
通讯作者：
Quanan Chen;Xiang Ma;Wei Sun;Ye Liu;Gonghai Liu;Gongyuan Zhao;Q. Lu;W. Guo